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BST82,235

P1-P3P4-P6P7-P9P10-P12P13-P14
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
BST82
N-channel enhancement mode field-effect transistor
Rev. 03 — 26 July 2000 Product specification
c
c
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
1
technology.
Product availability:
BST82 in SOT23.
2. Features
■ TrenchMOS™ technology
■ Very fast switching
■ Logic level compatible
■ Subminiature surface mount package.
3. Applications
■ Relay driver
■ High speed line driver
■ Logic level translator.
4. Pinning information
1. TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
SOT23 N-channel MOSFET
2 source (s)
3 drain (d)
12
3
03ab44
d
g
s
03ab30
Philips Semiconductors
BST82
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 26 July 2000 2 of 13
9397 750 07223
© Philips Electronics N.V. 2000. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
DS
drain-source voltage (DC) T
j
=25to150°C − 100 V
I
D
drain current (DC) T
sp
=25°C; V
GS
=5V − 190 mA
P
tot
total power dissipation T
sp
=25°C − 0.83 W
T
j
junction temperature − 150 °C
R
DSon
drain-source on-state resistance V
GS
=5V; I
D
= 150 mA 5 10 Ω
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) T
j
=25to150°C − 100 V
V
DGR
drain-gate voltage (DC) T
j
=25to150°C; R
GS
=20kΩ−100 V
V
GS
gate-source voltage (DC) −±20 V
I
D
drain current (DC) T
sp
=25°C; V
GS
=5V;Figure 2 and 3 − 190 mA
T
sp
= 100 °C; V
GS
=5V;Figure 2 − 120 mA
I
DM
peak drain current T
sp
=25°C; pulsed; t
p
≤ 10 µs;
Figure 3
− 0.8 A
P
tot
total power dissipation T
sp
=25°C; Figure 1 − 0.83 W
T
stg
storage temperature −65 +150 °C
T
j
operating junction temperature −65 +150 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
sp
=25°C − 190 mA
I
SM
peak source (diode forward) current T
sp
=25°C; pulsed; t
p
≤ 10 µs − 0.8 A
P1-P3P4-P6P7-P9P10-P12P13-P14

BST82,235

Mfr. #:
Buy BST82,235
Manufacturer:
Nexperia
Description:
MOSFET TRENCH-100 -TAPE 13
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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