Philips Semiconductors
BST82
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 26 July 2000 5 of 13
9397 750 07223
© Philips Electronics N.V. 2000. All rights reserved.
8. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
=10µA; V
GS
=0V
T
j
=25°C 100 130 − V
T
j
= −55 °C89−−V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
;
Figure 9
T
j
=25°C12− V
T
j
= 150 °C 0.6 −−V
T
j
= −55 °C −−3.5 V
I
DSS
drain-source leakage current V
DS
= 60 V; V
GS
=0V
T
j
=25°C − 0.01 1.0 µA
T
j
= 150 °C −−10 µA
I
GSS
gate-source leakage current V
GS
= ±20 V; V
DS
=0V − 10 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=5V; I
D
= 150 mA;
Figure 7 and 8
T
j
=25°C − 510Ω
T
j
= 150 °C −−23 Ω
Dynamic characteristics
g
fs
forward transconductance V
DS
=5V; I
D
= 175 mA;
Figure 11
− 350 − mS
C
iss
input capacitance V
GS
=0V; V
DS
=10V;
f = 1 MHz; Figure 12
− 25 40 pF
C
oss
output capacitance − 8.5 15 pF
C
rss
reverse transfer capacitance − 510pF
t
on
turn-on time V
DD
= 50 V; R
D
= 250 Ω;
V
GS
=10V; R
G
=50Ω;
R
GS
=50Ω
− 310ns
t
off
turn-off time − 12 15 ns
Source-drain diode
V
SD
source-drain (diode forward)
voltage
I
S
= 300 mA; V
GS
=0V;
Figure 13
− 0.95 1.5 V
t
rr
reverse recovery time I
S
= 300 mA;
dI
S
/dt = −100 A/µs;
V
GS
=0V; V
DS
=25V
− 30 − ns
Q
r
recovered charge − 30 − nC
