Philips Semiconductors
BST82
N-channel enhancement mode field-effect transistor
Product specification Rev. 03 — 26 July 2000 6 of 13
9397 750 07223
© Philips Electronics N.V. 2000. All rights reserved.
T
j
=25°CT
j
=25°C and 150 °C; V
DS
> I
D
× R
DSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03aa63
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V
DS
(V)
I
D
(A)
3.5 V
T
j
= 25
o
C V
GS
= 10V
4 V
3 V
5 V
03aa65
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
012345678
V
GS
(V)
I
D
(A)
V
DS
> I
D
X R
DSon
T
j
= 25
o
C
150
o
C
03aa64
0
1
2
3
4
5
6
7
8
9
10
11
12
0 0.1 0.2 0.3 0.4 0.5
I
D
(A)
R
DSon
(Ω)
V
GS
= 10V
T
j
= 25
o
C
4 V
3.5V3 V
5 V
03aa29
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60 -20 20 60 100 140 180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
