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2N7002P,215

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
AEC-Q101 qualified
Logic-level compatible
Trench MOSFET technology
Very fast switching
1.3 Applications
High-speed line driver
Low-side loadswitch
Relay driver
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
2N7002P
60 V, 360 mA N-channel Trench MOSFET
Rev. 02 — 29 July 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source
voltage
T
amb
=25°C --60V
V
GS
gate-source
voltage
-20 - 20 V
I
D
drain current V
GS
=10V; T
amb
=25°C
[1]
--360mA
Static characteristics
R
DSon
drain-source
on-state
resistance
V
GS
=10V; I
D
=500mA;
T
j
= 25 °C; pulsed; t
p
≤ 300 µs;
δ≤0.01
-11.6Ω
2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 2 of 15
NXP Semiconductors
2N7002P
60 V, 360 mA N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] % = -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT23 (TO-236AB)
2Ssource
3 D drain
12
3
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
2N7002P TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
2N7002P LW%
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
amb
=25°C - 60 V
V
GS
gate-source voltage -20 20 V
I
D
drain current V
GS
=10V; T
amb
=25°C
[1]
- 360 mA
V
GS
=10V; T
amb
= 100 °C
[1]
- 280 mA
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - 1.2 A
P
tot
total power dissipation T
amb
=25°C
[2]
- 350 mW
[1]
- 420 mW
T
sp
=25°C - 1140 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
=25°C
[1]
- 360 mA
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

2N7002P,215

Mfr. #:
Buy 2N7002P,215
Manufacturer:
Nexperia
Description:
MOSFET 60V 0.3A N-CHANNEL TRENCH MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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