2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 4 of 15
NXP Semiconductors
2N7002P
60 V, 360 mA N-channel Trench MOSFET
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
- 310 370 K/W
[2]
- 260 300 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
--115K/W
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm
2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa015
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
0
