REV. A
–3–
ADF4210/ADF4211/ADF4212/ADF4213
Parameter B Version B Chips
2
Unit Test Conditions/Comments
POWER SUPPLIES
V
DD
1 2.7/5.5 2.7/5.5 V min/V max
V
DD
2V
DD
1V
DD
1
V
P
V
DD
1/6.0 V
DD
1/6.0 V min/V max V
DD
1, V
DD
2 ⱕ V
DD
1, V
DD
2 ⱕ 6.0 V
I
DD
(RF + IF)
6
ADF4210 11.5 11.5 mA max 9.0 mA typical
ADF4211 15.0 15.0 mA max 11.0 mA typical
ADF4212 17.5 17.5 mA max 13.0 mA typical
ADF4213 20 20 mA max 15 mA typical
I
DD
(RF Only)
ADF4210 6.75 6.75 mA max 5.0 mA typical
ADF4211 10 10 mA max 7.0 mA typical
ADF4212 12.5 12.5 mA max 9.0 mA typical
ADF4213 15 15 mA max 11 mA typical
I
DD
(IF Only)
ADF4210 5.5 5.5 mA max 4.5 mA typical
ADF4211 5.5 5.5 mA max 4.5 mA typical
ADF4212 5.5 5.5 mA max 4.5 mA typical
ADF4213 5.5 5.5 mA max 4.5 mA typical
I
P
(I
P
1 + I
P
2) 1.0 1.0 mA max T
A
= 25°C, 0.55 mA typical
Low-Power Sleep Mode 1 1 µA typ
NOISE CHARACTERISTICS
ADF4213 Phase Noise Floor
7
–171 –171 dBc/Hz typ @ 25 kHz PFD Frequency
–164 –164 dBc/Hz typ @ 200 kHz PFD Frequency
Phase Noise Performance
8
@ VCO Output
ADF4210/ADF4211, IF: 540 MHz Output
9
–91 –91 dBc/Hz typ @ 1 kHz Offset and 200 kHz PFD Frequency
ADF4212/ADF4213, IF: 900 MHz Output
10
–89 –89 dBc/Hz typ See Note 11
ADF4210/ADF4211, RF: 900 MHz Output
10
–89 –89 dBc/Hz typ See Note 11
ADF4212/ADF4213, RF: 900 MHz Output
10
–91 –91 dBc/Hz typ See Note 11
ADF4211/ADF4212, RF: 1750 MHz Output
12
–85 –85 dBc/Hz typ See Note 11
ADF4211/ADF4212, RF: 1750 MHz Output
13
–67 –67 dBc/Hz typ @ 200 Hz Offset and 10 kHz PFD Frequency
ADF4212/ADF4213, RF: 2400 MHz Output
14
–88 –88 dBc/Hz typ @ 1 kHz Offset and 1 MHz PFD Frequency
Spurious Signals
ADF4210/ADF4211, IF: 540 MHz Output
9
–88/–90 –88/–90 dB typ @ 200 kHz/400 kHz and 200 kHz PFD Frequency
ADF4212/ADF4213, IF: 900 MHz Output
10
–90/–94 –90/–94 dB typ See Note 11
ADF4210/ADF4211, RF: 900 MHz Output
10
–90/–94 –90/–94 dB typ See Note 11
ADF4212/ADF4213, RF: 900 MHz Output
10
–90/–94 –90/–94 dB typ See Note 11
ADF4211/ADF4212, RF: 1750 MHz Output
12
–80/–82 –80/–82 dB typ See Note 11
ADF4211/ADF4212, RF: 1750 MHz Output
13
–65/–70 –65/–70 dB typ @ 10 kHz/20 kHz and 10 kHz PFD Frequency
ADF4212/ADF4213, RF: 2400 MHz Output
14
–80/–82 –80/–82 dB typ @ 200 kHz/400 kHz and 200 kHz PFD Frequency
NOTES
1
Operating temperature range is as follows: B Version: –40°C to +85°C.
2
The B Chip specifications are given as typical values.
3
This is the maximum operating frequency of the CMOS counters. The prescaler value should be chosen to ensure that the IF/RF input is divided down to a frequency that is
less than this value.
4
V
DD
1 = V
DD
2 = 3 V; For V
DD
1 = V
DD
2 = 5 V, use CMOS-compatible levels, T
A
= 25°C.
5
Guaranteed by design. Sample tested to ensure compliance.
6
V
DD
= 3 V; P = 16; RF
IN
= 900 MHz; IF
IN
= 540 MHz, T
A
= 25°C.
7
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 logN (where N is the N divider value). See
TPC 16.
8
The phase noise is measured with the EVAL-ADF4210/ADF4212/ADF4213EB Evaluation Board and the HP8562E Spectrum Analyzer. The spectrum analyzer provides the
REFIN for the synthesizer (f
REFOUT
= 10 MHz @ 0 dBm).
9
f
REFIN
= 10 MHz; f
PFD
= 200 kHz; Offset frequency = 1 kHz; f
IF
= 540 MHz; N = 2700; Loop B/W = 20 kHz.
10
f
REFIN
= 10 MHz; f
PFD
= 200 kHz; Offset frequency = 1 kHz; f
RF
= 900 MHz; N = 4500; Loop B/W = 20 kHz.
11
Same conditions as listed in Note 10.
12
f
REFIN
= 10 MHz; f
PFD
= 200 kHz; Offset frequency = 1 kHz; f
RF
= 1750 MHz; N = 8750; Loop B/W = 20 kHz.
13
f
REFIN
= 10 MHz; f
PFD
= 10 kHz; Offset frequency = 200 Hz; f
RF
= 1750 MHz; N = 175000; Loop B/W = 1 kHz.
14
f
REFIN
= 10 MHz; f
PFD
= 1 MHz; Offset frequency = 1 kHz; f
RF
= 1960 MHz; N = 9800; Loop B/W = 20 kHz.
Specifications subject to change without notice.
