MRF6S23100HR5 Datasheet MRF6S23100HR5, MRF6S23100HSR5, MRF6S23100HR3 | P1-P3

MRF6S23100HR3 MRF6S23100HSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 2300 to

2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

To be used in Class AB and Class C for WLL applications.

• Typical 2-Carrier W-CDMA Performance: V

= 28 Volts, I

= 1000 mA,

out

= 20 Watts Avg., f = 2390 MHz, Channel Bandwidth = 3.84 MHz,

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 15.4 dB

Drain Efficiency — 23.5%

IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -40.5 dBc @ 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 100 Watts CW

Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

Operation

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage V

DSS

-0.5, +68 Vdc

Gate-Source Voltage V

-0.5, +12 Vdc

Storage Temperature Range T

stg

-65 to +150 °C

Case Operating Temperature T

150 °C

Operating Junction Temperature

(1,2)

225 °C

Table 2. Thermal Characteristics

Characteristic Symbol Value

(2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 100 W CW

Case Temperature 75°C, 20 W CW

0.53

0.59

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

Document Number: MRF6S23100H

Rev. 2, 12/2008

Freescale Semiconductor

Technical Data

MRF6S23100HR3

MRF6S23100HSR3

2300-2400 MHz, 20 W AVG., 28 V

2 x W-CDMA

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 465-06, STYLE 1

NI-780

MRF6S23100HR3

CASE 465A-06, STYLE 1

NI-780S

MRF6S23100HSR3

RF Device Data

Freescale Semiconductor

MRF6S23100HR3 MRF6S23100HSR3

Table 3. ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 3A (Minimum)

Machine Model (per EIA/JESD22-A115) A (Minimum)

Charge Device Model (per JESD22-C101) IV (Minimum)

Table 4. Electrical Characteristics (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

= 68 Vdc, V

= 0 Vdc)

DSS

— — 10 µAdc

Zero Gate Voltage Drain Leakage Current

= 28 Vdc, V

= 0 Vdc)

DSS

— — 1 µAdc

Gate-Source Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

— — 1 µAdc

On Characteristics

Gate Threshold Voltage

= 10 Vdc, I

= 250 µAdc)

GS(th)

1 2 3 Vdc

Gate Quiescent Voltage

= 28 Vdc, I

= 1000 mAdc, Measured in Functional Test))

GS(Q)

2 2.8 4 Vdc

Drain-Source On-Voltage

= 10 Vdc, I

= 2.2 Adc)

DS(on)

0.1 0.21 0.3 Vdc

Dynamic Characteristics

(1)

Reverse Transfer Capacitance

= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

— 1.5 — pF

Functional Tests (In Freescale Test Fixture, 50 ohm system) V

= 28 Vdc, I

= 1000 mA, P

out

= 20 W Avg., f1 = 2390 MHz, f2 = 2400 MHz,

2- Carrier W- CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3

measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain G

14 15.4 17 dB

Drain Efficiency η

22.5 23.5 — %

Intermodulation Distortion IM3 -35 -37 — dBc

Adjacent Channel Power Ratio ACPR -38 -40.5 — dBc

Input Return Loss IRL — -10 — dB

1. Part is internally matched both on input and output.

MRF6S23100HR3 MRF6S23100HSR3

RF Device Data

Freescale Semiconductor

Figure 1. MRF6S23100HR3(HSR3) Test Circuit Schematic

Z9 0.329″ x 0.756″ Microstrip

Z10 0.083″ x 0.756″ Microstrip

Z11 0.092″ x 0.800″ Microstrip

Z12 0.436″ x 0.800″ Microstrip

Z13 0.974″ x 0.080″ Microstrip

Z14 0.727″ x 0.080″ Microstrip

PCB Arlon CuClad 250GX-0300-55-22, 0.030″, ε

= 2.55

Z1 0.725″ x 0.080″ Microstrip

Z2 0.240″ x 0.080″ Microstrip

Z3 0.110″ x 0.240″ Microstrip

Z4 0.140″ x 0.080″ Microstrip

Z5 0.167″ x 0.500″ Microstrip

Z6 0.130″ x 0.080″ Microstrip

Z7 0.250″ x 0.611″ Microstrip

Z8 0.060″ x 0.080″ Microstrip

BIAS

SUPPLY

OUTPUT

INPUT

DUT

C11

Z1 Z6 Z7 Z8

Z11 Z12 Z13 Z14

C12

C10C9C8

Z10

Z2 Z3 Z4 Z5

C4 C3 C2

Table 5. MRF6S23100HR3(HSR3) Test Circuit Component Designations and Values

Part Description Part Number Manufacturer

B1 Ferrite Bead, Surface Mount 2743019447 Fair-Rite

C1, C2, C7, C8 5.6 pF Chip Capacitors, B Case ATC100B5R6CT500XT ATC

C3 0.01 µF Chip Capacitor C1825C103J1RAC Kemet

C4, C9 2.2 µF, 50 V Chip Capacitors C1825C225J5RAC Kemet

C5 22 µF, 25 V Tantalum Capacitor T491D226K025AT Kemet

C6 47 µF, 16 V Tantalum Capacitor T491D476K016AT Kemet

C10, C11 10 µF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata

C12 330 µF, 63 V Electrolytic Capacitor EMVY630GTR331MMH0S Nippon Chemi-Con

R1 10 Ω, 1/4 W Chip Resistor CRC120610R0FKEA Vishay

P1-P3 P4-P6 P7-P9 P10-P11

MRF6S23100HR5

Mfr. #:

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Manufacturer:

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RF MOSFET Transistors HV6 2.3GHZ 20W

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MRF6S23100HR5

MRF6S23100HR5

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