6
RF Device Data
Freescale Semiconductor
MRF6S23100HR3 MRF6S23100HSR3
TYPICAL CHARACTERISTICS
11
18
0.1
0
70
P
out
, OUTPUT POWER (WATTS) CW
10
16
14
12
60
50
40
30
η
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
15
13
V
DD
= 28 Vdc
I
DQ
= 1000 mA
f = 2350 MHz
η
D
G
ps
IM3 (dBc), ACPR (dBc)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
-60
-1 0
0.1
7th Order
TWO-T ONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 1000 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
5th Order
3rd Order
-2 0
-3 0
-4 0
1 100
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
0
-55
P
out
, OUTPUT POWER (WATTS) AVG.
35
-20
-30
25
20
-35
10
10 100
-40
40
57
P3dB = 51.88 dBm (154.14 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 1000 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 2350 MHz
53
49
47
3433 36
Actual
Ideal
55
51
32
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
IM3
G
ps
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
160
10
16
0
12
11
20
13
14
I
DQ
= 1000 mA
f = 2350 MHz
30
-45
η
D
ACPR
V
DD
= 24 V
28 V
32 V
38
1
-25
40 60 80
10
20
P1dB = 51.18 dBm (131.19 W)
15
T
C
= 25_C
-30 _C
85_C
25_C
T
C
= -30_C
85_C
25_C
85_C
-30 _C
100
25_C
15
100
V
DD
= 28 Vdc, I
DQ
= 1000 mA
f1 = 2345 MHz, f2 = 2355 MHz
2-Carrier W-CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
393735
5 -50
-30 _C
85_C
25_C
25_C
17
1
120 140
