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UBA20260T/1,518

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30
UBA20260 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 10 October 2011 19 of 30
NXP Semiconductors
UBA20260
600 V driver IC for step dimmable CFLs
Boot strap diode
V
F
forward voltage bootstrap diode; I
FS
=5mA;
(V
F
=V
DD
-V
FS
)
1.3 1.7 2.1 V
Preheat current sensor
Input pin SLS
I
I(SLS)
input current on pin SLS V
i(SLS)
=0.4V - - 1 A
V
ph(SLS)
preheat voltage on pin SLS
[3]
0.57 0.60 0.63 V
Output pin CI
I
o(source)CI
source output current on pin CI V
CI
=2V; V
i(SLS)
<0.6V 10.6 9.6 8.6 A
I
o(sink)CI
sink output current on pin CI V
CI
=2V; V
i(SLS)
<0.6V 26 29 32 A
Preheat timer, ignition timer, overcurrent timer function
t
ph
preheat time C
CP
= 470 nF; R
ext(RREF)
= 33 k -0.93-s
t
en(ign)
ignition enable time C
CP
= 470 nF; R
ext(RREF)
= 33 k -0.22-s
t
fault(oc)
overcurrent fault time C
CP
= 470 nF; R
ext(RREF)
= 33 k;
initial voltage V
CP
=5V
-0.1-s
t
ret(dim)
dimming retention time C
CP
= 470 nF; R
ext(RREF)
= 33 k;
initial voltage V
CP
=5V
-2.8-s
I
o(CP)
output current on pin CP V
CP
= 4 V; source (); sink (+) 5.5 5.9 6.3 A
I
ret(dim)CP
dimming retention current on
pin CP
Current into pin CP; V
DD
=0V;
initial V
CP
= 5 V
-0.5-A
V
th(CP)min
minimum threshold voltage on pin
CP
V
CF
=0V, V
CI
=2V - 3.8 - V
V
th(CP)max
maximum threshold voltage on
pin CP
V
CF
=0V, V
CI
=2V - 4.5 - V
V
hys(CP)
hysteresis voltage on pin CP 0.6 0.7 0.8 V
I
pu(CP)
pull-up current on pin CP V
CP
= 3.8 V - 60 - A
V
ret(dim)CP
dimming retention voltage on
pin CP
V
DD
=0V - 2 - V
V
th(pd)CP
power-down threshold voltage on
pin CP
burn state; 10 k connected in
series
-1-V
V
th(rel)CP
release threshold voltage on pin CP hold state - 2.7 - V
Boost timer
Pin CB
t
bst
boost time C
CB
= 470 nF; T
j
<80C - 148 - s
I
o(CB)
output current on pin CB V
CB
= 2.35 V; source (); sink (+) 0.8 1 1.2 A
V
th(CB)min
minimum threshold voltage on pin
CB
-1.1-V
V
th(CB)max
maximum threshold voltage on pin
CB
-3.6-V
V
hys(CB)
hysteresis voltage on pin CB 2.3 2.5 2.7 V
T
j(bp)bst
boost bypass junction temperature T
j
sensed at end of ignition time 65 80 95 C
T
j(end)bst
boost end junction temperature T
j
during boost time 105 120 135 C
Table 5. Characteristics
…continued
V
DD
=13 V; V
FS
V
HBO
=13 V; T
amb
=25
C; settings according to default setting see Table 6 on page 25, all voltages
referenced to PGND and SGND, positive currents flow into the UBA20260, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
UBA20260 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 10 October 2011 20 of 30
NXP Semiconductors
UBA20260
600 V driver IC for step dimmable CFLs
I
det(dis)bst
boost disable detection current V
CB
=0V 30 25 20 A
t
t(bst-burn)
transition time from boost to burn C
CP
= 470 nF; T
j
<80C-3.6-s
Pin CSI
N
LCBR
lamp current boost ratio V
i(CSI)
in boost state versus V
i(CSI)
in
burn state; default start-up state
(no dimming)
1.4 1.5 1.6 V
Coil saturation protection and overcurrent detection
Input: pin SLS
V
th(sat)SLS
saturation threshold voltage on
pin SLS
ignition state 2.3 2.5 2.7 V
V
th(ocp)SLS
overcurrent protection threshold
voltage on pin SLS
boost state and burn state 2.3 2.5 2.7 V
t
leb
leading edge blanking time detection disabled for first part of
GLS time
- 800 - ns
Output pin CI
I
o(sink)CI
sink output current on pin CI V
CI
= 2 V; V
i(SLS)
> V
th(sat)SLS
; cycle
clocked
26 29 32 A
Output pin CF
I
o(sat)CF
saturation output current difference
on pin CF
V
CF
= 1.5 V; ignition state;
LS switch = on
-160-A
Ignition current detection
Input pin CSI
V
th(det)ign(CSI)
ignition detection threshold voltage
on pin CSI
0.55 0.6 0.65 V
t
w(det)ign(min)
minimum ignition detection pulse
width
V
th(det)ign(CSI)
= 0.75 V square pulse 685 885 1085 ns
Capacitive mode detection
Input pin SLS
V
th(capm)SLS
capacitive mode threshold voltage
on pin SLS
[4]
15 50 mV
Output pin CI
I
o(sink)CI
sink output current on pin CI V
i(SLS)
> V
th(capm)SLS
; V
CI
= 2 V;
ignition state or boost and burn
state
26 29 32 A
Lamp current sensor and dimming control
Input pin CSI
R
i(CSI)
input resistance on pin CSI V
i(CSI)
= 1 V 1 - - M
V
i(CSI)
= 1 V 40 50 60 k
V
i(CSI)
input voltage on pin CSI rectification linear for operation 2.5 - +2.5 V
minimum dim level;
R
ext(RREF)
=33k; R
MDL
=2k
44 50 56 mV
V
clamp(CSI)
clamping voltage on pin CSI RMS voltage; clamp active; default
start-up burn state; 100 % on
-1-V
Table 5. Characteristics …continued
V
DD
=13 V; V
FS
V
HBO
=13 V; T
amb
=25
C; settings according to default setting see Table 6 on page 25, all voltages
referenced to PGND and SGND, positive currents flow into the UBA20260, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
UBA20260 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 10 October 2011 21 of 30
NXP Semiconductors
UBA20260
600 V driver IC for step dimmable CFLs
[1] See Table 6 on page 25 for the default settings.
[2] The half-bridge output switching frequency (HBO). The saw-tooth frequency on pin CF is twice as high.
[3] Data sampling of V
ph(SLS)
is performed at the end of the LS power MOSFET conduction period in preheat state.
[4] Data sampling of V
th(capm)SLS
is performed at the start of conduction of the LS power MOSFET, in all states with oscillator active.
V
dim2(CSI)
dimming 2 voltage difference on
pin CSI
RMS voltage; offset from V
i(CSI)
at
DIM_2 compared to MDL
330 350 370 mV
V
dim3(CSI)
dimming 3 voltage difference on pin
CSI
RMS voltage; offset from V
i(CSI)
at
DIM_3 compared to MDL
90 100 110 mV
Output pin CI
I
o(CI)
output current on pin CI burn state; V
CI
= 2 V; source ()
and sink (+)
85 95 105 A
Input pin MDL (minimum dimming level)
I
source(MDL)
source current on pin MDL 26.3 25 23.7 A
V
MDL
voltage on pin MDL R
ext(RREF)
= 33 k; R
MDL
= 2 k -50-mV
Temperature protection
T
j(otp)
overtemperature protection junction
temperature
145 160 170 C
T
j(otp)hys
hysteresis overtemperature
protection junction temperature
10 20 30 C
Input pin CSI
V
otp(CSI)
overtemperature protection voltage
on pin CSI
RMS voltage; R
ext(RREF)
= 33 k;
R
MDL
=2 k; T
j
>T
j(opt)
T
j(hys)(otp)
380 400 420 mV
Table 5. Characteristics
…continued
V
DD
=13 V; V
FS
V
HBO
=13 V; T
amb
=25
C; settings according to default setting see Table 6 on page 25, all voltages
referenced to PGND and SGND, positive currents flow into the UBA20260, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30

UBA20260T/1,518

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Buy UBA20260T/1,518
Manufacturer:
NXP Semiconductors
Description:
IC CFL LAMP DVR 600V 16-SOIC
Lifecycle:
New from this manufacturer.
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