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MRF085HR5

P1-P3P4-P6P7-P9P10-P11
MRF085H
1
RF Device Data
NXP Semiconductors
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
This high ruggedness dev ice is designed for use in high VSWR indus trial,
scientific and medical applications and s ub--GHz aeros pace and defense and
mobile radio applications. Its unmatched input and output design allows for
wide frequency range use from 1.8 to 1215 MHz.
Typical Performance: V
DD
=50Vdc
Frequency
(MHz)
Signal Type
P
out
(W)
G
ps
(dB)
D
(%)
30–520
(1,2)
CW 50 CW 14.0 40.0
520
(3)
CW 85 CW 25.6 73.3
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type VSWR
P
in
(W)
Test
Voltage
Result
520
(3)
CW > 65:1
at all Phase
Angles
0.56
(3 dB
Overdrive)
50 No Device
Degradation
1. Measured in 30–520 MHz broadband reference circuit.
2. The values shown are the minimum measured performance numbers across the
indicated frequency range.
3. Measured in 520 MHz narrowband test circuit (page 5).
Features
Unmatched input and output allowing wide frequency range utilization
Device can be used single--ended or in a push--pull configuration
Characterizedfrom30to50Vforeaseofuse
Suitable for linear application
Integrated ESD protection with greater negative gate--source voltage range
for improved Class C operation
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma etching
– Particle accelerators
– Industrial heating, welding and drying systems
Broadcast
– Radio broadcast
– VHF TV broadcast
Aerospace
– VHF omnidirectional range (VOR)
– HF and VHF communications
– Weather radar
Mobile radio
– VHF and UHF radios
Document Number: MRF085H
Rev. 1, 10/2017
NXP Semiconductors
Technical Data
1.8–1215 MHz, 85 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
MRF085H
NI--650H--4L
Figure 1. Pin Connections
(Top View)
Drain A
Drain B
Gate A
Gate B
Note: The backside of the package is the
source terminal for the transistor.
31
42
2017 NXP B.V.
2
RF Device Data
NXP Semiconductors
MRF085H
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +133 Vdc
Gate--Source Voltage V
GS
--6.0, +10 Vdc
Operating Voltage V
DD
50, +0 Vdc
Storage Temperature Range T
stg
--65 to +150 C
Case Operating Temperature Range T
C
--40 to +150 C
Operating Junction Temperature Range
(1,2)
T
J
--40 to +225 C
Total Device Dissipation @ T
C
=25C
Derate above 25C
P
D
235
1.18
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 85C, 85 W CW , 50 Vdc, I
DQ(A+B)
= 100 mA, 520 MHz
R
JC
0.85 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2000 V
Charge Device Model (per JESD22--C101) C2, passes 500 V
Table 4. Electrical Characteristics (T
A
=25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 400 nAdc
Drain--Source Breakdown Voltage
(V
GS
=0Vdc,I
D
=50mA)
V
(BR)DSS
133 — — Vdc
Zero Gate Voltage Drain Leakage Current
(V
DS
=50Vdc,V
GS
=0Vdc)
I
DSS
— — 2 Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
=0Vdc)
I
DSS
— — 7 Adc
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
=10Vdc,I
D
=85Adc)
V
GS(th)
1.5 2.0 3.0 Vdc
Gate Quiescent Voltage
(V
DD
=50Vdc,I
D(A+B)
= 100 mAdc, Measured in Functional Test)
V
GS(Q)
2.0 2.6 3.3 Vdc
Drain--Source On--Voltage
(4)
(V
GS
=10Vdc,I
D
= 210 mAdc)
V
DS(on)
— 0.27 — Vdc
Dynamic Characteristics
(4)
Reverse Transfer Capacitance
(V
DS
=50Vdc 30 mV(rms)ac @ 1 MHz, V
GS
=0Vdc)
C
rss
— 0.17 — pF
Output Capacitance
(V
DS
=50Vdc 30 mV(rms)ac @ 1 MHz, V
GS
=0Vdc)
C
oss
— 14.7 — pF
Input Capacitance
(V
DS
=50Vdc,V
GS
=0Vdc 30 mV(rms)ac @ 1 MHz)
C
iss
— 39.0 — pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators
.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF
and search for AN1955.
4. Each side of device measured separately.
(continued)
MRF085H
3
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics
(T
A
=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In NXP Test Fixture, 50 ohm system) V
DD
=50Vdc,I
DQ(A+B)
= 100 mA, P
out
=85WCW,f=520MHz
Power Gain
G
ps
24.0 25.6 28.0 dB
Drain Efficiency
D
70.0 73.3 — %
Input Return Loss IRL — –21 –9 dB
Load Mismatch/Ruggedness (In NXP Test Fixture, 50 ohm system) I
DQ
= 150 mA
Frequency
(MHz)
Signal
Type
VSWR
P
in
(W) Test Voltage, V
DD
Result
520 CW > 65:1
at all Phase Angles
0.56
(3 dB Overdrive)
50 No Device
Degradation
Table 5. Ordering Information
Device Tape and Reel Information Package
MRF085HR3 R3 Suffix = 250 Units, 44 mm Tape Width, 13--inch Reel NI--650H--4L
MRF085HR5 R5 Suffix = 50 Units, 44 mm Tape Width, 13--inch Reel NI--650H--4L
P1-P3P4-P6P7-P9P10-P11

MRF085HR5

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Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors High Ruggedness N--Channel
Lifecycle:
New from this manufacturer.
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