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MRF085HR5

P1-P3P4-P6P7-P9P10-P11
4
RF Device Data
NXP Semiconductors
MRF085H
TYPICAL CHARACTERISTICS
100–50 0–25 25 50 75
I
DQ(A+B)
=20mA
NORMALIZED V
GS(Q)
1.04
0.94
V
DD
=50Vdc
0.96
0.98
1.00
1.02
1.06
100 mA
200 mA
300 mA
1
100
02010
V
DS
, DRAIN--SOURCE VOL TAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
10
C
rss
Measured with 30 mV(rms)ac
@1MHz,V
GS
=0Vdc
Note: Each side of device measured separately.
C
iss
30 40 50
C
oss
0.1
T
C
, CASE TEMPERATURE (C)
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
20
I
DQ
(mA)
Slope (mV/C)
100
200
300
–2.35
–1.88
–1.78
–1.59
250
10
8
90
T
J
, JUNCTION TEMPERATURE (C)
Figure 4. MTTF versus Junction Temperature – CW
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.nxp.com/RF/calculators
.
10
6
10
5
110 130
MTTF (HOURS)
150
10
7
10
4
170 190 210 230
I
D
=1.86Amps V
DD
=50Vdc
I
D
=2.59Amps
I
D
=2.34Amps
MRF085H
5
RF Device Data
NXP Semiconductors
520 MHz NARROWBAND PRODUCTION TEST FIXTURE – 4.05.0 (10.2 mm 12.7 mm)
Figure 5. MRF085H Narrowband Test Circuit Component Layout – 520 MHz
C7
C19
C6
C3
C4
C5
L2
L1
L3
C2
C9
C12
C14
C15
C16
C17
C8
C23
C18
C20 C21
C22
L6
Coax1
Coax2
Coax3
Coax4
B1
C1
B2
L4
L5
C10 C11
MRF085H
Rev. 0
D93611
CUT OUT AREA
C13
Table 6. MRF085H Narrowband Test Circuit Component Designations and Values – 520 MHz
Part Description Part Number Manufacturer
B1, B2 Short RF Bead 2743019447 Fair-Rite
C1, C7 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C2, C6, C9, C18 240 pF Chip Capacitor ATC100B241JT200XT ATC
C3, C4 51 pF Chip Capacitor ATC100B510GT500XT ATC
C5 36 pF Chip Capacitor ATC100B360JT500XT ATC
C8 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC
C10, C20 10 pF Chip Capacitor ATC200B103KT50XT ATC
C11, C21 0.01 F Chip Capacitor C1825C103K1GACTU Kemet
C12, C19 0.1 F Chip Capacitor C1812F104K1RACTU Kemet
C13, C22 220 F, 100 V Electrolytic Capacitor MCGPR100V227M16X26-RH Multicomp
C14, C15, C16, C17 120 pF Chip Capacitor ATC100B121JT300XT ATC
C23 5.6 p F Chip Capacitor ATC100B5R6CT500XT ATC
Coax1, 2, 3, 4
25 , Semi Rigid Coax, 2.4” Shield Length
UT141-25 Precision Tube Company
L1, L2, L5, L6 2.5 nH Inductor, 1 Turn A01TKLC Coilcraft
L3, L4 22 nH Inductor, 7 Turns B07TJLC Coilcraft
PCB Arlon AD255A, 0.030,
r
=2.55 D93611 MTL
6
RF Device Data
NXP Semiconductors
MRF085H
TYPICAL CHARACTERISTICS – 520 MHz
PRODUCTION TEST FIXTURE
P
in
, INPUT POWER (dBm)
35
30
P
out
, OUTPUT POWER (dBm)
302510 2015
40
45
5
520 88 94
f
(MHz)
P1dB
(W)
P3dB
(W)
Figure 6. CW Output Power versus Input Power
P
out
, OUTPUT POWER (WATTS)
Figure 7. Power Gain and Dr ain Efficiency
versus CW Output Power and Quiescent Current
G
ps
, POWER GAIN (dB)
D,
DRAIN EFFICIENCY (%)
26
25
27
10 100
0
80
70
60
50
28
D
G
ps
V
DD
= 50 Vdc, f = 520 MHz
24
T
C
= –40_C
22
21
20
27
0.5
10
100
10
80
70
60
50
40
30
20
28
P
out
, OUTPUT POWER (WATTS)
G
ps
, POWER GAIN (dB)
D,
DRAIN EFFICIENCY (%)
50
23
24
23
25
26
G
ps
0
200
200
V
DD
=50Vdc,I
DQ(A+B)
= 100 mA
f = 520 MHz
22
21
20
40
30
20
10
I
DQ(A+B)
= 300 mA
100 mA
200 mA
300 mA
200 mA
100 mA
1
1
25_C
85_C
25_C
V
DD
=50Vdc,I
DQ(A+B)
= 100 mA
f = 520 MHz
Figure 8. Power Gain and Dr ain Efficiency
versus CW Output Power
0
P
out
, OUTPUT POWER (WATTS)
Figure 9. Power Gain versus CW Output Power
and Drain--Source Voltage
24
G
ps
, POWER GAIN (dB)
20
18
60 80 100
22
V
DD
=30V
20 40
50 V
26
40 V
45 V
28
I
DQ(A+B)
= 100 mA, f = 520 MHz
35 V
–40_C
85_C
20 mA
D
P1-P3P4-P6P7-P9P10-P11

MRF085HR5

Mfr. #:
Buy MRF085HR5
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors High Ruggedness N--Channel
Lifecycle:
New from this manufacturer.
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