IXYX30N170CV1

© 2017 IXYS CORPORATION, All Rights Reserved
IXYK30N170CV1
IXYX30N170CV1
V
CES
= 1700V
I
C110
= 30A
V
CE(sat)



4.0V
t
fi(typ)
= 95ns
DS100724B(3/17)
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250A, V
GE
= 0V 1700 V
V
GE(th)
I
C
= 250A, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= 0.8 • V
CES
,
V
GE
= 0V 25 A
T
J
= 125C 4 mA
I
GES
V
CE
= 0V, V
GE
= 20V 100 nA
V
CE(sat)
I
C
= 30A, V
GE
= 15V, Note 1 3.5 4.0 V
T
J
= 150C 4.6 V
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 175°C 1700 V
V
CGR
T
J
= 25°C to 175°C, R
GE
= 1M 1700 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C 100 A
I
C110
T
C
= 110°C 30 A
I
F110
T
C
= 110°C 38 A
I
CM
T
C
= 25°C, 1ms 250 A
SSOA V
GE
= 15V, T
VJ
= 150°C, R
G
= 2.7 I
CM
= 120 A
(RBSOA) Clamped Inductive Load 1360 V
P
C
T
C
= 25°C 937 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque (TO-264) 1.13/10 Nm/lb.in
F
C
Mounting Force (PLUS247) 20..120 /4.5..27 N/lb
Weight TO-264 10 g
PLUS247 6 g
High Voltage
XPT
TM
IGBT
w/ Diode
Features
International Standard Packages
High Voltage Package
High Blocking Voltage
Low Saturation Voltage
Advantages
Low Gate Drive Requirement
High Power Density
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
Preliminary Technical Information
G = Gate D = Collector
S = Emitter Tab = Collector
PLUS247 (IXYX)
Tab
G
C
E
TO-264 (IXYK)
E
G
C
Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK30N170CV1
IXYX30N170CV1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
Reverse Diode (FRED)
(T
J
= 25°C, Unless Otherwise Specified) Characteristic Value
Symbol Test Conditions Min. Typ. Max.
V
F
3.5 V
T
J
= 150°C 3.7 V
I
RM
32 A
t
rr
175 ns
R
thJC
0.36°C/W
I
F
= 30A,V
GE
= 0V, -di
F
/dt = 500A/μs,
V
R
= 1200V, T
J
= 150°C
I
F
= 30A,V
GE
= 0V, Note 1
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 30A, V
CE
= 10V, Note 1 17 28 S
R
Gi
Gate Input Resistance 2.8
C
ie
s
3100 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 210 pF
C
res
55 pF
Q
g(on)
150 nC
Q
ge
I
C
= 30A, V
GE
= 15V, V
CE
= 0.5 • V
CES
15 nC
Q
gc
65 nC
t
d(on)
16 ns
t
ri
33 ns
E
on
3.6 mJ
t
d(off)
143 ns
t
fi
95 ns
E
of
f
1.8 mJ
t
d(on)
16 ns
t
ri
33 ns
E
on
5.5 mJ
t
d(off)
193 ns
t
fi
134 ns
E
off
3.5 mJ
R
thJC
0.16 °C/W
R
thCS
0.15 °C/W
Inductive load, T
J
= 25°C
I
C
= 30A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 2.7
Note 2
Inductive load, T
J
= 150°C
I
C
= 30A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 2.7
Note 2
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Terminals: 1 - Gate
2,4 - Collector
3 - Emitter
PLUS 247
TM
Outline
TO-264 Outline
Terminals: 1 = Gate
2,4 = Colector
3 = Emitter
b
Q
D
R
E
A
S
R1
x2
b2
b1
A1
L1
31 2
L
c
e
4
0P
e
Q1
1 2 3
4
b
C
L
D
R
Q
E
A
A1
L1
D2
D1
E1
A2
b2 2 PLCS
3 PLCS
2 PLCS
b4
© 2017 IXYS CORPORATION, All Rights Reserved
IXYK30N170CV1
IXYX30N170CV1
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
10
20
30
40
50
60
0123456
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
10V
9V
8V
7V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
50
100
150
200
250
300
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
10V
8V
11V
12V
7V
6V
9V
14V
13V
Fig. 3. Output Characteristics @ T
J
= 150
o
C
0
10
20
30
40
50
60
012345678
V
CE
- Volts
I
C
- Amperes
8V
V
GE
= 15V
13V
11V
10V
9V
5V
6V
7V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 30A
I
C
= 15A
I
C
= 60A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
2.0
3.0
4.0
5.0
6.0
7.0
8.0
6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I
C
= 60A
T
J
= 25ºC
30A
15A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
456789
V
GE
- Volts
I
C
-
Amperes
T
J
= 150
o
C
25
o
C
- 40
o
C

IXYX30N170CV1

Mfr. #:
Manufacturer:
Littelfuse
Description:
IGBT Transistors 1700V/108A High Voltage XPT IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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