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IXYX30N170CV1

P1-P3P4-P6P7-P7
© 2017 IXYS CORPORATION, All Rights Reserved
IXYK30N170CV1
IXYX30N170CV1
Fig. 26. Maximum Transient Thermal Impedance
(Diode)
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 21. Diode Forward Characteristics
0
20
40
60
80
100
01234567
V
F
(V)
I
F
(A)
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 22. Reverse Recovery Charge vs. -di
F
/dt
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
300 350 400 450 500 550 600 650 700 750 800
-di
F
/ dt (A/μs)
Q
RR
(μC)
I
F
= 60A
15A
30A
T
J
= 150
o
C
V
R
= 1200V
Fig. 23. Reverse Recovery Current vs. -di
F
/dt
15
20
25
30
35
40
45
50
55
300 400 500 600 700 800
di
F
/dt (A/μs)
I
RR
(A)
I
F
= 60A, 30A, 15A
T
J
= 150
o
C
V
R
= 1200V
Fig. 24. Reverse Recovery Time vs. -di
F
/dt
100
120
140
160
180
200
220
240
260
300 400 500 600 700 800
-di
F
/dt (A/μs)
t
RR
(ns)
15A
30A
I
F
= 60A
T
J
= 150
o
C
V
R
= 1200V
Fig. 25. Dynamic Parameters Q
RR,
I
RR
vs.
Junction Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0 20 40 60 80 100 120 140 160
T
J
(ºC)
K
F
K
F
I
RR
K
F
Q
RR
V
R
= 1200V
I
F
= 30A
-diF/dt = 500A/μs
P1-P3P4-P6P7-P7

IXYX30N170CV1

Mfr. #:
Buy IXYX30N170CV1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 1700V/108A High Voltage XPT IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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