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IXYX30N170CV1

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK30N170CV1
IXYX30N170CV1
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
40
45
0 102030405060708090
I
C
- Amperes
g
f s
-
Siemens
25
o
C
150
o
C
T
J
= - 40
o
C
Fig. 10. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
200 400 600 800 1000 1200 1400 1600 1800
V
CE
- Volts
I
C
- Amperes
T
J
= 150
o
C
R
G
= 2.7
Ω
dv / dt < 10V / ns
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 850V
I
C
= 30A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
ies
C
oes
C
res
© 2017 IXYS CORPORATION, All Rights Reserved
IXYK30N170CV1
IXYX30N170CV1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
2
4
6
8
10
12
3 6 9 12151821242730
R
G
- Ohms
E
off
- MilliJoules
0
5
10
15
20
25
30
E
on
- MilliJoules
E
off
E
on
T
J
= 150
º
C , V
GE
= 15V
V
CE
= 850V
I
C
= 30A
I
C
= 60A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
60
80
100
120
140
160
180
3 6 9 12151821242730
R
G
- Ohms
t
f i
- Nanoseconds
100
200
300
400
500
600
700
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 150
o
C, V
GE
= 15V
V
CE
= 850V
I
C
= 60A
I
C
= 30A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0
1
2
3
4
5
6
7
8
9
10
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
0
4
8
12
16
20
E
on
- MilliJoules
E
off
E
on
R
G
= 2.7
Ω
V
GE
= 15V
V
CE
= 850V
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0
1
2
3
4
5
6
7
8
9
10
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
14
16
18
20
E
on
- MilliJoules
E
off
E
on
R
G
= 2.7
Ω
V
GE
= 15V
V
CE
= 850V
I
C
= 30A
I
C
= 60A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
40
60
80
100
120
140
160
180
200
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
f i
- Nanoseconds
100
120
140
160
180
200
220
240
260
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 2.7
Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 150
o
C
T
J
= 25
o
C
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
100
120
140
160
180
200
220
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 2.7
Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 60A
I
C
= 30A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYK30N170CV1
IXYX30N170CV1
IXYS REF: IXY_30N170CV1(7T-AT653) 3-29-17-A
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
20
40
60
80
100
120
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
r i
- Nanoseconds
14
15
16
17
18
19
20
t
d
(
on
)
- Nanoseconds
t
r i
t
d(on)
R
G
= 2.7
Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 25
o
C
T
J
= 150
o
C
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
14
15
16
17
18
19
20
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 2.7
Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 60A
I
C
= 30A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
180
3 6 9 12151821242730
R
G
- Ohms
t
r i
- Nanoseconds
10
15
20
25
30
35
40
45
50
55
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 150
o
C, V
GE
= 15V
V
CE
= 850V
I
C
= 30A
I
C
= 60A
P1-P3P4-P6P7-P7

IXYX30N170CV1

Mfr. #:
Buy IXYX30N170CV1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 1700V/108A High Voltage XPT IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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