STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 34 A
I
D
Drain current (continuous) at T
C
= 100 °C 22 A
I
DM
(1)
Drain current (pulsed) 136 A
P
TOT
Total dissipation at T
C
= 25 °C 250 W
dv/dt
(2)
Peak diode recovery voltage slope 15 V/ns
dv/dt
(3)
MOSFET dv/dt ruggedness 50 V/ns
T
stg
Storage temperature - 55 to 150 °C
T
j
Max. operating junction temperature 150 °C
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
SD
≤ 34 A, di/dt ≤ 400 A/µs; V
DS(peak)
< V
(BR)DSS
, V
DD
= 400 V.
(3)
V
DS
≤ 480 V
Table 3: Thermal data
Symbol Parameter
Value
Unit
D²PAK TO-220
TO-
247
R
thj-case
Thermal resistance junction-case max 0.50 °C/W
R
thj-pcb
(1)
Thermal resistance junction-pcb max 30
°C/W
R
thj-amb
Thermal resistance junction-ambient max
62.5 50 °C/W
Notes:
(1)
When mounted on FR-4 board of inch², 2oz Cu.
Table 4: Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetetive or not
repetetive (pulse width limited by T
jmax
)
6 A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
; V
DD
= 50 V)
800 mJ
