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STW42N60M2-EP

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
Electrical characteristics
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
4/20
DocID027327 Rev 1
2 Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 5: On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
V
GS
= 0 V, I
D
= 1 mA 600
V
I
DSS
Zero gate voltage Drain
current
V
GS
= 0 V, V
DS
= 600 V
1 µA
V
GS
= 0 V, V
DS
= 600 V,
T
C
= 125 °C
100 µA
I
GSS
Gate-body leakage current
V
DS
= 0 V, V
GS
= ±25 V
±10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 17 A
0.076 0.087 Ω
Table 6: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
- 2370 - pF
C
oss
Output capacitance - 112 - pF
C
rss
Reverse transfer
capacitance
- 2.5 - pF
C
oss eq.
(1)
Equivalent output
capacitance
V
DS
= 0 to 480 V, V
GS
= 0 V - 454 - pF
R
G
Intrinsic gate resistance f = 1 MHz, I
D
= 0 A - 4.5 - Ω
Q
g
Total gate charge
V
DD
= 480 V, I
D
= 34 A,
V
GS
= 10 V (see Figure 18:
"Gate charge test circuit")
- 55 - nC
Q
gs
Gate-source charge - 8.5 - nC
Q
gd
Gate-drain charge - 25 - nC
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Table 7: Switching energy
Symbol Parameter Test conditions Min. Typ. Max. Unit
E
(off)
Turn-off energy
(from 90% V
GS
to 0% I
D
)
V
DD
= 400 V, I
D
= 2.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
- 13 - µJ
V
DD
= 400 V, I
D
= 5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
- 14.5 - µJ
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Electrical characteristics
DocID027327 Rev 1
5/20
Table 8: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time V
DD
= 300 V, I
D
= 17 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 17: "Switching
times test circuit for
resistive load" and Figure
22: "Switching time
waveform" )
- 16.5 - ns
t
r
Rise time - 9.5 - ns
t
d(off)
Turn-off-delay time - 96.5 - ns
t
f
Fall time - 8 - ns
Table 9: Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current
-
34 A
I
SDM
(1)
Source-drain current
(pulsed)
-
136 A
V
SD
(2)
Forward on voltage V
GS
= 0 V, I
SD
= 34 A -
1.6 V
t
rr
Reverse recovery time
I
SD
= 34 A,
di/dt = 100 A/µs,
V
DD
= 60 V (see Figure 22:
"Switching time waveform")
- 438
ns
Q
rr
Reverse recovery charge - 9
µC
I
RRM
Reverse recovery current - 41.5
A
t
rr
Reverse recovery time
I
SD
= 34 A,
di/dt = 100 A/µs,
V
DD
= 60 V, T
j
= 150 °C
(see Figure 22: "Switching
time waveform")
- 538
ns
Q
rr
Reverse recovery charge - 12
µC
I
RRM
Reverse recovery current - 44.5
A
Notes:
(1)
Pulse width is limited by safe operating area
(2)
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
6/20
DocID027327 Rev 1
2.2 Electrical characteristics (curves)
Figure 2: Safe operating area for D²PAK and
TO-220
Figure 3: Thermal impedance for D²PAK and
TO-220
Figure 4: Safe operating area for TO-247
Figure 5: Thermal impedance for TO-247
Figure 6: Output characteristics
Figure 7: Transfer characteristics
GIPG070120151456ALS
0.1 1 10 100
0.1
1
10
100
I
D
(A)
10µs
100µs
1ms
10ms
Operation in this area
is limited by max R
DS(on)
T
j
=150°C
T
C
=25°C
Single pulse
V
DS
(V)
K
t
p
Ƭ
Z
th
= K*R
thj-c
δ= t
p
/Ƭ
Single pulse
0.01
δ=0.5
10
-1
10
-2
10
-4
10
-5
10
-3
10
-2
10
-1
t
P
(s)
0.2
0.1
0.05
0.02
GC20540
0.1 1 10 100
0.1
1
10
100
I
D
(A)
10µs
100µs
1ms
10ms
Operation in this area
is limited by max R
DS(on)
T
j
=150°C
T
C
=25°C
Single pulse
V
DS
(V)
GIPG070120151628ALS
K
t
p
Ƭ
Z
th
= K*R
thj-c
δ= t
p
/Ƭ
Single pulse
0.01
δ=0.5
10
-1
10
-2
10
-3
10
-4
10
-5
10
-3
10
-2
10
-1
t
P
(s)
0.2
0.1
0.05
0.02
GC18460
I
D
(A)
V
GS
= 7, 8, 9, 10 V
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 4 V
V
DS
(V)
0 4 8 12 16
0
20
40
60
80
GIPG080120150837ALS
GIPG080120150946ALS
0
20
40
60
80
0 2 4 6 8
V
DS
= 18 V
I
D
(A)
V
GS
(V)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

STW42N60M2-EP

Mfr. #:
Buy STW42N60M2-EP
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-247 package
Lifecycle:
New from this manufacturer.
Delivery:
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