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STW42N60M2-EP

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Electrical characteristics
DocID027327 Rev 1
7/20
Figure 8: Gate charge vs gate-source voltage
Figure 9: Static drain-source on-resistance
Figure 10: Capacitance variations
Figure 11: Output capacitance stored energy
Figure 12: Turn-off switching loss vs drain
current
Figure 13: Normalized gate threshold voltage
vs temperature
V
DD
= 480 V
I
D
= 34 A
V
DS
V
GS
(V)
V
DS
(V)
Q
g
(nC)
0
100
200
300
400
500
0
2
4
6
8
10
12
0 10 20 30 40 50 60
GIPG080120151019ALS
V
GS
= 10 V
R
DS(on)
(Ω)
I
D
(A)
0.072
0.074
0.076
0.078
0.080
0 5 10 15 20 25 30 35
GIPG080120151046ALS
1
10
100
1000
10000
0.1 1 10 100
C
ISS
C
OSS
C
RSS
C
(pF)
V
DS
(V)
f = 1 Mhz
GIPG080120151120ALS
0
2
4
6
8
10
12
14
16
18
0 200 400 600
E
OSS
(µJ)
V
DS
(V)
GIPG080120151125ALS
E
OFF
(µJ)
I
D
(A)
10
12
14
16
18
0 1 2 3 4 5 6 7
GIPG080120151154ALS
-75 -25 25 75 125
0.6
0.7
0.8
0.9
1
1.1
V
GS(th)
(norm)
I
D
= 250 µA
T
J
(°C)
GIPG080120151205ALS
Electrical characteristics
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
8/20
DocID027327 Rev 1
GIPG080120151
513ALS
V
(BR)DSS
(V)
I
D
= 1 mA
T
j
(°C)
0.88
0.92
0.96
1.00
1.04
1.08
-75 -25 25 75 125
Figure 14: Normalized on-resistance vs
temperature
Figure 15: Source-drain diode forward
characteristics
Figure 16: Normalized V(BR)DSS vs temperature
R
DS(on)
(norm)
V
GS
= 10 V
T
J
(°C)
0.2
0.6
1
1.4
1.8
2.2
-75 -25 25 75 125
GIPG080120151407ALS
GIPG080120151416ALS
V
SD
(V)
T
J
= -50 °C
T
J
= 25 °C
T
J
= 150 °C
I
SD
(A)
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0 4 8 12 16 20 24 28 32
STB42N60M2-EP, STP42N60M2-EP,
STW42N60M2-EP
Test circuits
DocID027327 Rev 1
9/20
3 Test circuits
Figure 17: Switching times test circuit for resistive
load
Figure 18: Gate charge test circuit
Figure 19: Test circuit for inductive load
switching and diode recovery times
Figure 20: Unclamped inductive load test circuit
Figure 21: Unclamped inductive waveform
Figure 22: Switching time waveform
AM01469v1
V
DD
47 k Ω
1 kΩ
47 k Ω
2.7 k Ω
1 kΩ
12 V
V
i
≤ V
GS
2200 μ F
P
W
I
G
= CONST
100 Ω
100 nF
D.U.T.
V
G
V
(BR)DS S
V
DD
V
DD
V
D
I
DM
I
D
AM01472v1
AM01473v1
0
V
GS
90%
V
DS
t
on
90%
10%
90%
10%
t
d(on)
t
r
t
t
d(off)
t
f
10%
0
off
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

STW42N60M2-EP

Mfr. #:
Buy STW42N60M2-EP
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-247 package
Lifecycle:
New from this manufacturer.
Delivery:
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