4
ATF-33143 Typical Performance Curves
Notes:
1. Measurements made on a xed tuned production test board that was tuned for optimal gain match with reasonable noise gure at 4V 80 mA
bias. This circuit represents a trade-o between optimal noise match, maximum gain match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
2. Quiescent drain current, I
DSQ
, is set with zero RF drive applied. As P
1dB
is approached, the drain current may increase or decrease depending on
frequency and dc bias point. At lower values of I
DSQ
the device is running closer to class B as power output approaches P
1dB
. This results in higher
P
1dB
and higher PAE (power added e ciency) when compared to a device that is driven by a constant current source as is typically done with
active biasing.
Figure 8. P
1dB
vs. Bias
[1,2]
at 2 GHz. Figure 9. P
1dB
vs. Bias
[1,2]
Tuned for NF @ 4V, 80mA at
900MHz.
Figure 10. NF and G
a
vs. Bias
[1]
at 2GHz. Figure 11. NF and G
a
vs. Bias
[1]
at 900 MHz.
I
DSQ
(mA)
Figure 6. OIP3, IIP3 vs. Bias
[1]
at 2GHz.
OIP3, IIP3 (dBm)
0 120
40
30
20
10
0
4020 1008060
2 V
3 V
4 V
I
DSQ
(mA)
Figure 7. OIP3, IIP3 vs. Bias
[1]
at 900 MHz.
OIP3, IIP3 (dBm)
40
30
20
10
0
2 V
3 V
4 V
0 1204020 1008060
I
DSQ
(mA)
P
1dB
(dBm)
25
20
15
10
5
0
2 V
3 V
4 V
0 1204020 80 10060
NF
G
a
I
DSQ
(mA)
G
a
(dB)
16
15
14
13
12
11
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
NOISE FIGURE (dB)
2 V
3 V
4 V
0 1204020 80 10060
I
DSQ
(mA)
G
a
(dB)
22
21
20
19
18
17
16
1.2
1.0
0.8
0.6
0.4
0.2
0
NOISE FIGURE (dB)
2 V
3 V
4 V
NF
G
a
0 1204020 80 10060
I
DSQ
(mA)
P
1dB
(dBm)
25
20
15
10
5
0
2 V
3 V
4 V
0 1204020 80 10060
