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BFG540W/X,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
2000 May 23 10
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
handbook, full pagewidth
MLC053
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
45
o
90
o
135
o
1
0.5
0.2
0.5
1
2
5
2
0.2
2
5
5
o
180
0.2 1
0
0.5
40 MHz
3 GHz
V
CE
=8V; I
C
=40mA; Z
o
=50.
Fig.19 Common emitter input reflection coefficient (s
11
); typical values.
V
CE
=8V; I
C
=40mA.
Fig.20 Common emitter forward transmission coefficient (s
21
); typical values.
handbook, full pagewidth
MLC054
0
o
90
o
135
o
180
o
90
o
50 40 30 20 10
45
o
135
o
45
o
40 MHz
3 GHz
2000 May 23 11
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
V
CE
=8V; I
C
=40mA.
Fig.21 Common emitter reverse transmission coefficient (s
12
); typical values.
handbook, full pagewidth
MLC055
0
o
90
o
135
o
180
o
90
o
0.25 0.20 0.15 0.10 0.05
45
o
135
o
45
o
40 MHz
3 GHz
V
CE
=8V; I
C
=40mAZ
o
=50
Fig.22 Common emitter output reflection coefficient (s
22
); typical values.
handbook, full pagewidth
MLC056
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
180
o
45
o
90
o
135
o
1
0.5
0
0.2
0.5
1
2
0.2 0.5 2
40 MHz
3 GHz
0.2
1 5
5
2
5
2000 May 23 12
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
SPICE parameters for the BFG540W crystal
SEQUENCE No. PARAMETER VALUE UNIT
1 IS 1.045 fA
2BF184.3
3 NF 0.981
4 VAF 41.69 V
5 IKF 10.00 A
6 ISE 232.4 fA
7 NE 2.028
8 BR 43.99
9 NR 0.992
10 VAR 2.097 V
11 IKR 166.2 mA
12 ISC 129.8 aA
13 NC 1.064
14 RB 5.000
15 IRB 1.000 A
16 RBM 5.000
17 RE 353.5 m
18 RC 1.340
19
(1)
XTB 0.000
20
(1)
EG 1.110 eV
21
(1)
XTI 3.000
22 CJE 1.978 pF
23 VJE 600.0 mV
24 MJE 0.332
25 TF 7.457 ps
26 XTF 11.40
27 VTF 3.158 V
28 ITF 156.9 mA
29 PTF 0.000 deg
30 CJC 793.7 fF
31 VJC 185.5 mV
32 MJC 0.084
33 XCJC 0.150
34 TR 1.598 ns
35
(1)
CJS 0.000 F
Note
1. These parameters have not been extracted, the
default values are shown.
List of components (see Fig.23).
36
(1)
VJS 750.0 mV
37
(1)
MJS 0.000
38 FC 0.814
DESIGNATION VALUE UNIT
C
be
70 fF
C
cb
50 fF
C
ce
115 fF
L1 0.34 nH
L2 0.10 nH
L3 0.25 nH
L
B
0.40 nH
L
E
0.40 nH
SEQUENCE No. PARAMETER VALUE UNIT
QL
B
= 50; QL
E
=50; QL
B,E
(f) = QL
B,E
(f/f
c
)
f
c
= scaling frequency = 1 GHz.
Fig.23 Package equivalent circuit SOT343N;
SOT343R.
handbook, halfpage
MBC964
B
E
CB' C'
E'
L
B
L
E
L3
L1 L2
C
cb
C
be ce
C
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

BFG540W/X,115

Mfr. #:
Buy BFG540W/X,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN 8V 120mA 9GHZ
Lifecycle:
New from this manufacturer.
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