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BFG540W/X,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
2000 May 23 7
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
Fig.11 Intermodulation distortion as a function of
collector current; typical values.
V
o
=500mV; f
(p + q r)
= 793.25 MHz; V
CE
=8V; T
amb
=25C;
R
L
=75.
handbook, halfpage
10 60
−20
−70
−60
−50
−40
−30
20 30 40
d
im
(dB)
I
C
(mA)
50
MEA973
Fig.12 Second order intermodulation distortion as
a function of collector current; typical
values.
V
o
=275mV; f
(p + q)
= 810 MHz; V
CE
=8V; T
amb
=25C; R
L
=75.
handbook, halfpage
10 60
−20
−70
−60
−50
−40
−30
20 30 40
d
2
(dB)
I
C
(mA)
50
MEA972
Fig.13 Minimum noise figure as a function of
collector current; typical values.
V
CE
=8V.
handbook, halfpage
4
2
1
0
MLC049
3
F
(dB)
I (mA)
C
f = 2000 MHz
1000 MHz
900 MHz
500 MHz
1
10 10
2
Fig.14 Associated available gain as a function of
collector current; typical values.
V
CE
=8V.
handbook, halfpage
5
0
1
2
5
0
−5
10
G
ass
(dB)
15
20
3
F
min
(dB)
I
C
(mA)
4
MRA760
1
10
2
10
2000 MHz
1000 MHz
2000 MHz
1000 MHz
f = 900 MHz
G
ass
F
min
900 MHz
500 MHz
2000 May 23 8
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
Fig.15 Minimum noise figure as a function of
frequency; typical values.
V
CE
=8V.
handbook, halfpage
4
2
1
0
MLC050
3
F
(dB)
f (MHz)
10
4
10
3
10
2
I = 40 mA
10 mA
C
Fig.16 Associated available gain as a function of
frequency; typical values.
V
CE
=8V.
handbook, halfpage
5
0
1
2
5
0
−5
10
G
ass
(dB)
15
20
3
F
min
(dB)
f (MHz)
4
MRA761
10
2
10
4
10
3
G
ass
10 mA
F
min
40 mA
40 mA
I
C
= 10 mA
2000 May 23 9
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
handbook, full pagewidth
MLC051
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
45
o
135
o
1
0.5
0
0.2
0.5
1
2
5
F = 3 dB
F = 2 dB
F = 1.5 dB
opt
Γ
F = 1.3 dB
min
2
stability
circle
unstable
region
1
5
o
180
0.2
50.2 0.5 2
90
o
Fig.17 Common emitter noise figure circles; typical values.
f=900MHz; V
CE
=8V; I
C
=10mA; Z
o
=50
handbook, full pagewidth
MLC052
00
o
0.2
0.6
0.4
0.8
1.0
1.0
45
o
90
o
135
o
45
o
90
o
135
o
1
0.5
0.5
1
2
5
2
F = 4 dB
opt
Γ
0.2
2
5
5
o
180
0
0.2
0.2 0.5 1
G = 9 dB
G = 8 dB
G = 9.8 dB
max
F = 2.1 dB
min
F = 1.5 dB
F = 3 dB
Fig.18 Common emitter noise figure circles; typical values.
f=2GHz; V
CE
=8V; I
C
=10mA; Z
o
=50
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

BFG540W/X,115

Mfr. #:
Buy BFG540W/X,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN 8V 120mA 9GHZ
Lifecycle:
New from this manufacturer.
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