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BFG540W/X,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
2000 May 23 4
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
CHARACTERISTICS
T
j
=25C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming s
12
is zero.
2. I
C
=40mA; V
CE
=8V; R
L
=50; T
amb
=25C;
a) f
p
=900MHz; f
q
= 902 MHz; measured at f
(2p q)
= 898 MHz and f
(2q p)
=904MHz.
3. d
im
= 60 dB (DIN45004B); V
p
=V
o
; V
q
=V
o
6dB; V
r
=V
o
6dB; R
L
=75; V
CE
=8V; I
C
=40mA;
a) f
p
=795.25MHz; f
q
= 803.25 MHz; f
r
= 805.25 MHz; measured at f
(p + q r)
=793.25MHz.
4. I
C
=40mA; V
CE
=8V; V
o
= 275 mV; R
L
=75; T
amb
=25C;
a) f
p
=250MHz; f
q
= 560 MHz; measured at f
(p + q)
= 810 MHz.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)CBO
collector-base breakdown
voltage
open emitter; I
C
=10A; I
E
=0 20 V
V
(BR)CES
collector-emitter breakdown
voltage
R
BE
=0; I
C
=40A15V
V
(BR)EBO
emitter-base breakdown
voltage
open collector; I
E
=100A; I
C
=0 2.5 V
I
CBO
collector cut-off current open emitter; V
CB
=8V; I
E
=0 50 nA
h
FE
DC current gain I
C
=40mA; V
CE
= 8 V 100 120 250
f
T
transition frequency I
C
=40mA; V
CE
= 8 V; f = 1 GHz;
T
amb
=25C
9 GHz
C
c
collector capacitance I
E
=i
e
=0; V
CB
=8V; f=1MHz 0.9 pF
C
e
emitter capacitance I
C
=i
c
=0; V
EB
=0.5V; f=1MHz 2 pF
C
re
feedback capacitance I
C
=0; V
CB
=8V; f=1MHz 0.5 pF
G
UM
maximum unilateral power
gain; note 1
I
C
=40mA; V
CE
=8V; f=900MHz;
T
amb
=25C
16 dB
I
C
=40mA; V
CE
= 8 V; f = 2 GHz;
T
amb
=25C
10 dB
|s
21
|
2
insertion power gain I
C
=40mA; V
CE
=8V; f=900MHz;
T
amb
=25C
14 15 dB
F noise figure
s

opt
; I
C
=10mA; V
CE
=8V;
f=900MHz
1.3 1.8 dB
s

opt
; I
C
=40mA; V
CE
=8V;
f=900MHz
1.9 2.4 dB
s

opt
; I
C
=10mA; V
CE
=8V;
f=2GHz
2.1 dB
P
L1
output power at 1 dB gain
compression
I
C
=40mA; V
CE
=8V; f=900MHz;
R
L
=50; T
amb
=25C
21 dBm
ITO third order intercept point note 2 34 dBm
V
o
output voltage note 3 500 mV
d
2
second order intermodulation
distortion
note 4 50 dB
G
UM
10
s
21
2
1s
11
2
–1s
22
2
–
--------------------------------------------------------
dB.log=
2000 May 23 5
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
V
CE
=8V.
Fig.4 DC current gain as a function of
collector current; typical values.
handbook, halfpage
0
250
50
100
150
200
MRA749
10
−2
10
−1
11010
2
h
FE
I
C
(mA)
I
C
=0; f=1MHz.
Fig.5 Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
04
C
re
(pF)
V
CB
(V)
812
1
0
0.8
0.6
0.4
0.2
MRA750
Fig.6 Transition frequency as a function of
collector current; typical values.
f=1GHz; T
amb
=25C.
handbook, halfpage
12
4
8
MLC044
0
110
1
10
2
10
I (mA)
C
f
(GHz)
T
V = 8 V
CE
V = 4 V
CE
2000 May 23 6
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor
BFG540W
BFG540W/X; BFG540W/XR
f=900MHz; V
CE
=8V.
Fig.7 Gain as a function of collector current;
typical values.
handbook, halfpage
0
30
20
10
0
50
MLC045
10 20 30 40
gain
(dB)
I (mA)
C
MSG
G
UM
G
max
f=2GHz; V
CE
=8V.
Fig.8 Gain as a function of collector current;
typical values.
handbook, halfpage
0
30
20
10
0
50
MLC046
10 20 30 40
gain
(dB)
I (mA)
C
G
UM
G
max
I
C
=10mA; V
CE
=8V.
Fig.9 Gain as a function of frequency; typical
values.
handbook, halfpage
50
0
10
MLC047
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G
UM
G
max
MSG
Fig.10 Gain as a function of frequency; typical
values.
I
C
=40mA; V
CE
=8V.
handbook, halfpage
50
0
10
MLC048
10
2
10
3
10
4
10
20
30
40
gain
(dB)
f (MHz)
G
UM
G
max
MSG
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

BFG540W/X,115

Mfr. #:
Buy BFG540W/X,115
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN 8V 120mA 9GHZ
Lifecycle:
New from this manufacturer.
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