BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
www.onsemi.com
10
TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES
Figure 25. DC Current Gain vs. Collector
Current
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0
100
200
300
400
500
0.10.010.0010.0001
0
0.05
0.10
0.15
0.20
0.25
0.35
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
Figure 28. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
V
CE
= 5 V
150°C
−55°C
25°C
I
C
/I
B
= 20
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 20
150°C
−55°C
25°C
V
CE
= 5 V
150°C
−55°C
25°C
0.4
0.7
1.1
0.30
Figure 29. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 30. Base−Emitter Temperature
Coefficient
I
C
, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
-1.2
-1.6
-2.0
-0.02 -1.0
-10
0
-20
-0.1
-0.4
-0.8
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
-0.2
-10 -100
-1.0
-55°C to +125°C
I
C
= -100 mA
I
C
= -20 mA
I
C
= -200 mAI
C
= -50 mAI
C
=
-10 mA
T
A
= 25°C
1.0
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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11
TYPICAL PNP CHARACTERISTICS − BC847/SBC847 SERIES
Figure 31. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
10
Figure 32. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mAdc)
-0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
-0.5
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
T
A
= 25°C
C
ob
C
ib
-0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40
150
-1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50
V
CE
= -10 V
T
A
= 25°C
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
www.onsemi.com
12
TYPICAL NPN CHARACTERISTICS − BC848 SERIES
Figure 33. DC Current Gain vs. Collector
Current
Figure 34. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0
100
200
300
400
1000
0.10.010.0010.0001
0
0.05
0.10
0.15
0.20
0.25
0.30
Figure 35. Base Emitter Saturation Voltage vs.
Collector Current
Figure 36. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
V
CE
= 5 V
150°C
−55°C
25°C
I
C
/I
B
= 20
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 20
150°C
−55°C
25°C
V
CE
= 5 V
150°C
−55°C
25°C
0.4
0.7
1.1
500
600
700
800
900
1.0
Figure 37. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 38. Base−Emitter Temperature
Coefficient
I
C
, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0
10
0
20
0.1
0.4
0.8
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0
10 100
-55°C to +125°C
T
A
= 25°C
I
C
= 50 mA I
C
= 100 mA
I
C
= 200 mA
I
C
=
20 mA
I
C
=
10 mA
1.0

BC847BPDW1T3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS SC88 GP XSTR DUAL 45V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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