BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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13
TYPICAL NPN CHARACTERISTICS − BC848 SERIES
Figure 39. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
10
Figure 40. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0
2.0 6.0
40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0
50
307.05.03.00.5
V
CE
= 10 V
T
A
= 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
T
A
= 25°C
C
ob
C
ib
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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TYPICAL PNP CHARACTERISTICS − BC848 SERIES
Figure 41. DC Current Gain vs. Collector
Current
Figure 42. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0
100
200
300
400
1000
0.10.010.0010.0001
0
0.05
0.10
0.15
0.20
0.25
0.30
Figure 43. Base Emitter Saturation Voltage vs.
Collector Current
Figure 44. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
V
CE
= 5 V
150°C
−55°C
25°C
I
C
/I
B
= 20
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 20
150°C
−55°C
25°C
V
CE
= 5 V
150°C
−55°C
25°C
0.4
0.7
1.1
500
600
700
800
900
Figure 45. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 46. Base−Emitter Temperature
Coefficient
I
C
, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
-1.2
-1.6
-2.0
-0.02 -1.0
-10
0
-20
-0.1
-0.4
-0.8
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
-0.2
-10 -100
-1.0
-55°C to +125°C
I
C
= -100 mA
I
C
= -20 mA
I
C
= -200 mAI
C
= -50 mAI
C
=
-10 mA
T
A
= 25°C
1.0
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
www.onsemi.com
15
TYPICAL PNP CHARACTERISTICS − BC848 SERIES
Figure 47. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
10
Figure 48. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mAdc)
-0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
-0.5
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
T
A
= 25°C
C
ob
C
ib
-0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40
150
-1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50
V
CE
= -10 V
T
A
= 25°C

BC847BPDW1T3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS SC88 GP XSTR DUAL 45V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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