BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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7
TYPICAL PNP CHARACTERISTICS — BC846/SBC846
Figure 15. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
40
Figure 16. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
-0.1 -0.2 -1.0 -50
2.0
-2.0 -10
-100
100
200
500
50
20
20
10
6.0
4.0
-1.0 -10
-100
V
CE
= -5.0 V
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
-0.5 -5.0 -20
T
J
= 25°C
C
ob
C
ib
8.0
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
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8
TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES
Figure 17. DC Current Gain vs. Collector
Current
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
10.10.010.001
0
100
200
300
400
500
0.10.010.0010.0001
0
0.05
0.10
0.15
0.20
0.25
0.30
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
V
CE
= 5 V
150°C
−55°C
25°C
I
C
/I
B
= 20
150°C
−55°C
25°C
0.4
0.9
I
C
/I
B
= 20
150°C
−55°C
25°C
V
CE
= 5 V
150°C
−55°C
25°C
0.4
0.7
1.1
1.0
Figure 21. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 22. Base−Emitter Temperature
Coefficient
I
C
, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0
10
0
20
0.1
0.4
0.8
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0
10 100
-55°C to +125°C
T
A
= 25°C
I
C
= 50 mA I
C
= 100 mA
I
C
= 200 mA
I
C
=
20 mA
I
C
=
10 mA
1.0
BC846BPDW1, BC847BPDW1, BC848CPDW1 Series
www.onsemi.com
9
TYPICAL NPN CHARACTERISTICS − BC847/SBC847 SERIES
Figure 23. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
10
Figure 24. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0
2.0 6.0
40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0
50
307.05.03.00.5
V
CE
= 10 V
T
A
= 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
T
A
= 25°C
C
ob
C
ib

BC847BPDW1T3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS SC88 GP XSTR DUAL 45V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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