OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PSMN3R3-80ES,127

P1-P3P4-P6P7-P9P10-P12P13-P15
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
1. Product profile
1.1 General description
Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switch
Motor control
Server power supplies
1.4 Quick reference data
[1] Continuous current is limited by package.
[2] Measured 3 mm from package.
PSMN3R3-80ES
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
Rev. 1 — 31 October 2011 Product data sheet
I2PAK
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 80 V
I
D
drain current T
mb
=25°C; V
GS
=10V; see Figure 1
[1]
- - 120 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - - 338 W
T
j
junction temperature -55 - 175 °C
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
=100°C;
see Figure 12
-4.65.4mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 13
[2]
-2.83.3mΩ
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=10V; I
D
=75A; V
DS
=40V;
see Figure 14
; see Figure 15
-27-nC
Q
G(tot)
total gate charge - 139 - nC
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
=120A;
V
sup
≤ 80 V; R
GS
=50Ω; unclamped
- - 676 mJ
PSMN3R3-80ES All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 31 October 2011 2 of 14
NXP Semiconductors
PSMN3R3-80ES
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
2. Pinning information
3. Ordering information
4. Limiting values
[1] Continuous current is limited by package.
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
SOT226 (I2PAK)
2 D drain
3Ssource
mb D drain
321
mb
S
D
G
mbb076
Table 3. Ordering information
Type number Package
Name Description Version
PSMN3R3-80ES I2PAK plastic single-ended package (I2PAK); TO-262 SOT226
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 80 V
V
DGR
drain-gate voltage T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
=20kΩ -80V
V
GS
gate-source voltage -20 20 V
I
D
drain current V
GS
=10V; T
mb
= 100 °C; see Figure 1
[1]
- 120 A
V
GS
=10V; T
mb
=25°C; see Figure 1
[1]
- 120 A
I
DM
peak drain current pulsed; t
p
≤ 10 µs; T
mb
=25°C;
see Figure 3
- 830 A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 - 338 W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
T
sld(M)
peak soldering temperature - 260 °C
Source-drain diode
I
S
source current T
mb
=25°C
[1]
- 120 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 830 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
=120A;
V
sup
≤ 80 V; R
GS
=50Ω; unclamped
- 676 mJ
P1-P3P4-P6P7-P9P10-P12P13-P15

PSMN3R3-80ES,127

Mfr. #:
Buy PSMN3R3-80ES,127
Manufacturer:
Nexperia
Description:
MOSFET N-Ch 80V 3.3 m std level MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet