PSMN3R3-80ES All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 31 October 2011 6 of 14
NXP Semiconductors
PSMN3R3-80ES
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
[1] Measured 3 mm from package.
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
=25°C;
see Figure 17
-0.81.2V
t
rr
reverse recovery time I
S
=25A; dI
S
/dt = 100 A/µs;
V
GS
=0V; V
DS
=20V
-63-ns
Q
r
recovered charge - 121 - nC
Table 6. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003aaf602
0
50
100
150
200
250
0 20406080
I
D
(A)
g
fs
(S)
003aaf603
0
25
50
75
0246
V
GS
(V)
I
D
(A)
T
j
= 25
°
C
T
j
= 175
°
C
003aag797
0
2
4
6
8
048121620
V
GS
(V)
R
DSon
(m
Ω
)
003aaf606
0
4000
8000
12000
16000
10
-1
1 10 10
2
V
GS
(V)
C
(pF)
C
iss
C
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