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PSMN3R3-80ES,127

P1-P3P4-P6P7-P9P10-P12P13-P15
PSMN3R3-80ES All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 31 October 2011 3 of 14
NXP Semiconductors
PSMN3R3-80ES
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aag823
10
-1
1
10
10
2
10
3
0.1 1 10 100 1000
V
DS
(V)
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
DC
100
μ
s
10 ms
t
p
=10
μ
s
100 ms
1 ms
PSMN3R3-80ES All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 31 October 2011 4 of 14
NXP Semiconductors
PSMN3R3-80ES
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to mounting base see Figure 4 - 0.22 0.44 K/W
R
th(j-a)
thermal resistance from junction to ambient Vertical in free air - 60 - K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aaf613
10
-3
10
-2
10
-1
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
tp
T
P
t
tp
T
δ =
δ = 0.5
0.2
0.1
0.05
0.02
single shot
Z
th(j-mb)
(K/W)
PSMN3R3-80ES All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 31 October 2011 5 of 14
NXP Semiconductors
PSMN3R3-80ES
N-channel 80 V, 3.3 mΩ standard level MOSFET in I2PAK
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 250 µA; V
GS
=0V; T
j
=-55°C 73--V
I
D
= 250 µA; V
GS
=0V; T
j
=25°C 80--V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
=V
GS
; T
j
=175°C;
see Figure 10
1--V
I
D
=1mA; V
DS
=V
GS
; T
j
=-55°C;
see Figure 10
--4.6V
I
D
=1mA; V
DS
=V
GS
; T
j
=25°C;
see Figure 10; see Figure 11
234V
I
DSS
drain leakage current V
DS
=80V; V
GS
=0V; T
j
= 25 °C - 0.02 10 µA
V
DS
=80V; V
GS
=0V; T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
GS
=-20V; V
DS
=0V; T
j
= 25 °C - - 100 nA
V
GS
=20V; V
DS
=0V; T
j
= 25 °C - - 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
=175°C;
see Figure 12
-6.77.9mΩ
V
GS
=10V; I
D
=25A; T
j
=100°C;
see Figure 12
-4.65.4mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C;
see Figure 13
[1]
-2.83.3mΩ
R
G
internal gate resistance (AC) f = 1 MHz - 0.9 - Ω
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=0A; V
DS
=0V; V
GS
= 10 V - 135 - nC
I
D
=75A; V
DS
=40V; V
GS
=10V;
see Figure 14
; see Figure 15
- 139 - nC
Q
GS
gate-source charge - 51 - nC
Q
GS(th)
pre-threshold gate-source
charge
-30-nC
Q
GS(th-pl)
post-threshold gate-source
charge
-21-nC
Q
GD
gate-drain charge - 27 - nC
V
GS(pl)
gate-source plateau voltage I
D
=25A; V
DS
=40V; see Figure 14;
see Figure 15
-5.8-V
C
iss
input capacitance V
DS
=40V; V
GS
=0V; f=1MHz;
T
j
= 25 °C; see Figure 16
- 9961 - pF
C
oss
output capacitance - 847 - pF
C
rss
reverse transfer capacitance - 401 - pF
t
d(on)
turn-on delay time V
DS
=40V; R
L
=0.53Ω; V
GS
=10V;
R
G(ext)
=10Ω; I
D
=75A
-41-ns
t
r
rise time - 43 - ns
t
d(off)
turn-off delay time - 109 - ns
t
f
fall time - 44 - ns
P1-P3P4-P6P7-P9P10-P12P13-P15

PSMN3R3-80ES,127

Mfr. #:
Buy PSMN3R3-80ES,127
Manufacturer:
Nexperia
Description:
MOSFET N-Ch 80V 3.3 m std level MOSFET
Lifecycle:
New from this manufacturer.
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