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IXFN420N10T

P1-P3P4-P6
© 2015 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25C to 175C 100 V
V
DGR
T
J
= 25C to 175C, R
GS
= 1M 100 V
V
GSS
Continuous 20 V
V
GSM
Transient 30 V
I
D25
T
C
= 25C (Chip Capability) 420 A
I
L(RMS)
External Lead Current Limit 200 A
I
DM
T
C
= 25C, Pulse Width Limited by T
JM
1000 A
I
A
T
C
= 25C 100 A
E
AS
T
C
= 25C5J
dV/dt I
S
I
DM
, V
DD
V
DSS
, T
J
175°C 20 V/ns
P
D
T
C
= 25C 1070 W
T
J
-55 ... +175 C
T
JM
175 C
T
stg
-55 ... +175 C
V
ISOL
50/60 Hz, RMS t = 1 minute 2500 V~
I
ISOL
1mA t = 1 second 3000 V~
M
d
Mounting Torque 1.5/13 Nm/lb.in
Terminal Connection Torque 1.3/11.5 Nm/lb.in
Weight 30 g
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 3mA 100 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA 2.5 5.0 V
I
GSS
V
GS
= 20V, V
DS
= 0V 200 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 50 A
T
J
= 150C 5 mA
R
DS(on)
V
GS
= 10V, I
D
= 60A, Note 1 2.3 m
GigaMOS
TM
Trench
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN420N10T
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
DS100199A(7/15)
miniBLOC, SOT-227
E153432
G
D
S
S
G = Gate D = Drain
S = Source
V
DSS
= 100V
I
D25
= 420A
R
DS(on)
2.3m
t
rr
140ns
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation Voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low R
DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Synchronous Recification
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN420N10T
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s; duty cycle, d 2%.
SOT-227B (IXFN) Outline
(M4 screws (4x) supplied)
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 110 185 S
C
iss
47 nF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 4390 pF
C
rss
530 pF
R
Gi
Gate Input Resistance 1.46
t
d(on)
47 ns
t
r
155 ns
t
d(off)
115 ns
t
f
255 ns
Q
g(on)
670 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
170 nC
Q
gd
195 nC
R
thJC
0.14C/W
R
thCS
0.05 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 420 A
I
SM
Repetitive, Pulse Width Limited by T
JM
1680 A
V
SD
I
F
= 60A, V
GS
= 0V, Note 1 1.2 V
t
rr
140 ns
Q
RM
0.38 μC
I
RM
7.00 A
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 100A
R
G
= 1 (External)
I
F
= 150A, V
GS
= 0V
-di/dt = 100A/s
V
R
= 60V
© 2015 IXYS CORPORATION, All Rights Reserved
IXFN420N10T
Fig. 1. Output Characteristics
@ T
J
= 25ºC
0
50
100
150
200
250
300
350
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
8V
7V
4V
6V
5V
Fig. 3. Output Characteristics
@ T
J
= 150ºC
0
40
80
120
160
200
240
280
320
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
8V
7V
5
V
6
V
4
V
4.5V
Fig. 4. Normalized R
DS(on)
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
< 420A
Fig. 5. Normalized R
DS(on)
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0 50 100 150 200 250 300 350
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 175ºC
T
J
= 25ºC
Fig. 2. Extended Output Characteristics
@ T
J
= 25ºC
0
50
100
150
200
250
300
350
400
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
7V
4V
5V
5.5V
6V
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
160
180
200
220
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
P1-P3P4-P6

IXFN420N10T

Mfr. #:
Buy IXFN420N10T
Manufacturer:
Littelfuse
Description:
MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A
Lifecycle:
New from this manufacturer.
Delivery:
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