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IXFN420N10T
P1-P3
P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN420N10T
Fig. 7. Input Adm
itta
nce
0
20
40
60
80
100
120
140
160
180
3.0
3.5
4.0
4.5
5.0
5.5
V
GS
- Vo
l
ts
I
D
- Amper
es
T
J
= 150ºC
- 40ºC
25ºC
Fig. 8
. T
ran
sc
onduc
tanc
e
0
50
100
150
200
250
300
350
0
20
40
60
80
100
120
140
160
180
I
D
- Am
pe
res
g
f s
- Si
emens
T
J
= -
40ºC
150ºC
25ºC
Fi
g.
9. F
or
ward Vo
ltag
e Dr
op
of
Intrinsic
Dio
de
0
50
100
150
200
250
300
350
0.2
0.3
0.4
0.
5
0.6
0
.7
0.8
0.9
1.0
1.1
V
SD
- Vo
l
ts
I
S
- Ampe
res
T
J
= 150ºC
T
J
= 25ºC
Fi
g.
10. Gate C
har
ge
0
1
2
3
4
5
6
7
8
9
10
0
100
200
300
400
500
600
700
Q
G
-
N
a
no
C
o
ulombs
V
GS
- Vol
ts
V
DS
= 50V
I
D
= 210A
I
G
= 10mA
Fig. 1
1. Ca
pac
ita
nce
0.1
1.0
10.0
100.0
0
5
10
15
20
25
30
35
40
V
DS
- Vo
l
ts
Capacit
ance - NanoFarads
f
= 1 MH
z
C
iss
C
rss
C
oss
Fig. 1
2. Forw
ard
-Bia
s S
afe
Ope
rat
ing Are
a
1
10
100
1,000
10,000
1
10
100
1,
000
V
DS
- Vol
ts
I
D
- Amperes
25µs
100µs
1ms
10ms
R
DS(on
)
Lim
it
T
J
= 175ºC
T
C
= 25º
C
Single Pu
lse
100m
s
Ex
ter
n
al Lead Li
mi
t
DC
© 2015 IXYS CORPORATION, All Rights Reserved
IXFN420N10T
Fig
. 14. R
esistive T
u
rn
-on R
ise T
i
m
e
vs. D
r
ain
C
ur
re
nt
0
40
80
120
160
200
240
280
320
40
60
80
100
120
140
160
180
200
I
D
- A
m
pe
res
t
r
- Nanoseconds
T
J
= 25º
C
T
J
= 125ºC
R
G
= 1
,
V
GS
= 10
V
V
DS
= 50V
Fi
g.
15.
R
esi
sti
ve T
u
r
n-o
n
Swi
tchi
n
g T
i
m
es
vs.
Gate R
esi
stan
ce
100
200
300
400
500
600
700
12
345
6789
1
0
R
G
- Oh
m
s
t
r
- Nanoseconds
0
40
80
120
160
200
240
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 5
0V
I
D
=
100A
I
D
=
200A
Fi
g.
16.
R
esi
stive
T
u
r
n-o
ff Swi
tch
in
g
T
im
es
vs. Ju
n
ctio
n
T
em
per
atu
re
0
100
200
300
400
500
600
700
25
35
45
55
65
7
5
85
95
105
115
125
T
J
- Deg
rees Cen
tig
rad
e
t
f
- Nan
ose
cond
s
80
100
120
140
160
180
200
220
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1
, V
GS
= 10V
V
DS
= 50
V
I
D
= 100
A
I
D
= 200A
Fi
g.
17.
R
esi
sti
ve T
u
r
n-o
ff Sw
itch
i
ng
T
im
e
s
vs. D
ra
in
C
ur
ren
t
0
100
200
300
400
500
40
6
0
80
100
12
0
140
160
180
200
I
D
- Am
p
e
res
t
f
- Nanoseconds
60
100
140
180
220
260
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1
, V
GS
= 10
V
V
DS
= 50
V
T
J
= 25º
C
T
J
= 125ºC
Fi
g
. 13.
R
esi
stiv
e T
u
r
n-
on
R
ise T
i
m
e
vs. Ju
n
ctio
n
T
em
per
atu
re
100
140
180
220
260
300
340
25
35
45
55
65
75
8
5
95
105
115
125
T
J
- Deg
rees Ce
nt
ig
rad
e
t
r
- Nanoseconds
R
G
= 1
, V
GS
= 10V
V
DS
= 50V
I
D
= 200A
I
D
= 100A
Fi
g
. 18.
R
esist
ive T
ur
n
-o
ff Switc
hi
n
g T
im
es
vs. Gat
e Resi
stan
ce
100
200
300
400
500
600
700
800
12
34
5678
9
1
0
R
G
- Oh
m
s
t
f
- Nanoseconds
100
200
300
400
500
600
700
800
t
d
(
off
)
- Nan
ose
cond
s
t
f
t
d(off)
- - - -
T
J
= 125ºC,
V
GS
= 10V
V
DS
= 5
0V
I
D
= 200A
I
D
= 100
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFN420N10T
IXYS REF: F_420N10T (9V)9-22-09
Fi
g.
19. M
axim
u
m
T
r
ansi
ent T
h
erm
al
Im
pe
dan
ce
0.0
01
0.0
10
0.1
00
1.0
00
0.00001
0.0001
0.001
0.01
0.1
1
10
Puls
e
W
i
dth -
S
e
c
o
nds
Z
(th
)J
C
- º
C
/
W
Fig. 19
. M
ax
im
ium
T
rans
ient
T
herm
al Im
peda
nce
.sad
gsf
gsf
0.2
00
P1-P3
P4-P6
IXFN420N10T
Mfr. #:
Buy IXFN420N10T
Manufacturer:
Littelfuse
Description:
MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A
Lifecycle:
New from this manufacturer.
Delivery:
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IXFN420N10T