April 2006 Rev 1 1/12
12
STP80NF10FP
N-channel 100V - 0.012 - 38A - TO-220FP
Low gate charge STripFET™ II Power MOSFET
General features
Exceptional dv/dt capability
100% Avalanche tested
Application oriented characterization
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
(1)
STP80NF10FP 100V <0.015 38A
1
2
3
TO-220FP
www.st.com
Order codes
Part number Marking Package Packaging
STP80NF10FP P80NF10FP TO-220FP Tube
Contents STP80NF10FP
2/12
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STP80NF10FP Electrical ratings
3/12
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 100 V
V
GS
Gate- source voltage ±20 V
I
D
(1)
1. Limited by Package
Drain current (continuous) at T
C
= 25°C 38 A
I
D
(1)
Drain current (continuous) at T
C
= 100°C 27 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 152 A
P
TOT
Total dissipation at T
C
= 25°C 45 W
Derating factor 0.3 W/°C
dv/dt
(3)
3. I
SD
<80A, di/dt < 300A/µs, V
DD
=80% V
(BR)DSS
Peak diode recovery voltage slope 9 V/ns
E
AS
(4)
4. Starting Tj = 25°C, I
D
= 80A, V
DD
= 50V
Single pulse avalanche energy 350 mJ
V
ISO
Insulation withstand voltage (DC) 2500 V
T
stg
Tj
Storage temperature
Operating junction temperature
-55 to 175 °C
Table 2. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case Max 3.33 °C/W
Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W
T
l
Maximum lead temperature for soldering purpose 300 °C

STP80NF10FP

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 100V 0.012 Ohm 30A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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