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STP80NF10FP

P1-P3P4-P6P7-P9P10-P12
Electrical characteristics STP80NF10FP
4/12
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test condictions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 250µA, V
GS
= 0 100 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating @125°C
1
10
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ±20V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 2 3 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 40A 0.012 0.015 Ω
Table 4. Dynamic
Symbol Parameter Test condictions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Forward transconductance V
DS
=25V
,
I
D
=40 A 80 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
4300
600
230
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 80V, I
D
= 80A,
V
GS
= 10V
140
23
51
189 nC
nC
nC
STP80NF10FP Electrical characteristics
5/12
Table 5. Switching times
Symbol Parameter Test condictions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V
DD
= 50V, I
D
= 40A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 14)
40
145
134
115
ns
ns
ns
ns
Table 6. Source drain diode
Symbol Parameter Test condictions Min Typ. Max Unit
I
SD
Source-drain current 38 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 152 A
V
SD
(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage I
SD
= 80A, V
GS
= 0 1.3 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=80A, V
DD
= 50V
di/dt = 100A/µs,T
j
=150°C
155
850
11
ns
nC
A
Electrical characteristics STP80NF10FP
6/12
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12

STP80NF10FP

Mfr. #:
Buy STP80NF10FP
Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 100V 0.012 Ohm 30A
Lifecycle:
New from this manufacturer.
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