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VS-100MT060WDF

P1-P3P4-P6P7-P9P10-P11
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
1
Document Number: 93412
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Primary MTP IGBT Power Module
FEATURES
• Buck PFC stage with warp 2 IGBT and FRED Pt
®
hyperfast diode
• Integrated thermistor
• Isolated baseplate
• Very low stray inductance design for high speed operation
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Lower conduction losses and switching losses
• Higher switching frequency up to 150 kHz
• Optimized for welding, UPS, and SMPS applications
• PCB solderable terminals
• Direct mounting to heatsink
PRODUCT SUMMARY
FRED Pt
®
AP DIODE, T
J
= 150 °C
V
RRM
600 V
I
F(DC)
at 80 °C 11 A
V
F
at 25 °C at 60 A 2.08 V
IGBT, T
J
= 150 °C
V
CES
600 V
V
CE(ON)
at 25 °C at 60 A 1.98 V
I
C
at 80°C 83 A
FRED Pt
®
CHOPPER DIODE, T
J
= 150 °C
V
R
600 V
I
F(DC)
at 80 °C 17 A
V
F
at 25 °C at 60 A 2.06 V
Speed 30 kHz to 150 kHz
Package MTP
Circuit Dual forward
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
FRED Pt
Antiparallel
Diode
Repetitive peak reverse voltage V
RRM
600 V
Maximum continuous forward current
T
J
= 150 °C maximum
I
F(DC)
T
C
= 25 °C 17
A
T
C
= 80 °C 11
Maximum power dissipation P
D
T
C
= 25 °C 25 W
IGBT
Collector to emitter voltage V
CES
T
J
= 25 °C 600 V
Gate to emitter voltage V
GE
I
GES
max. ± 250 ns ± 20 V
Maximum continuous collector current
at V
GE
= 15 V, T
J
= 150 °C maximum
I
C
T
C
= 25 °C 121
AT
C
= 80 °C 83
Clamped inductive load current I
LM
300
Maximum power dissipation P
D
T
C
= 25 °C 462 W
FRED Pt
Chopper Diode
Repetitive peak reverse voltage V
RRM
600 V
Maximum continuous forward current
T
J
= 150 °C maximum
I
F
T
C
= 25 °C 26
A
T
C
= 80 °C 17
Maximum power dissipation P
D
T
C
= 25 °C 56 W
Maximum operating junction temperature T
J
150
°C
Storage temperature range T
Stg
-40 to +150
Isolation voltage V
ISOL
V
RMS
t = 1 s, T
J
= 25 °C 3500 V
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
2
Document Number: 93412
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
AP Diode
Blocking voltage BV
RRM
0.5 mA 600 - - V
Forward voltage drop V
FM
I
F
= 60 A - 2.08 2.43
V
I
F
= 60 A, T
J
= 125 °C - 2.05 2.3
IGBT
Collector to emitter
breakdown voltage
BV
CES
V
GE
= 0 V, I
C
= 0.5 mA 600 - - V
Temperature coefficient of
breakdown voltage
V
BR(CES)
/T
J
I
C
= 0.5 mA (25 °C to 125 °C) - 0.6 - V/°C
Collector to emitter voltage V
CE(ON)
V
GE
15 V, I
C
= 60 A - 1.93 2.29
V
V
GE
= 15 V, l
C
= 60 A, T
J
= 125 °C - 2.36 2.80
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 500 μA 2.9 - 6.0 V
Collector to emitter
leakage current
I
CES
V
GE
= 0 V, V
CE
= 600 V - - 100 μA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C - - 2.0 mA
Gate to emitter leakage I
GES
V
GE
= ± 20 V - - ± 100 nA
FRED Pt
Chopper
Diode
Forward voltage drop V
FM
I
F
= 60 A - 2.06 2.53
VI
F
= 60 A, T
J
= 125 °C - 1.83 2.26
Blocking voltage BV
RM
0.5 mA 600 - -
Reverse leakage current I
RM
V
RRM
= 600 V - - 75 μA
V
RRM
= 600 V, T
J
= 125 °C - - 0.5 mA
RECOVERY PARAMETER
AP Diode
Peak reverse recovery current I
rr
I
F
= 60 A
dI/dt = 200 A/μs
V
R
= 200 V
-6711A
Reverse recovery time t
rr
- 120 160 ns
Reverse recovery charge Q
rr
- 620 850 nC
FRED Pt
Chopper
Diode
Peak reverse recovery current I
rr
I
F
= 60 A
dI/dt = 200 A/μs
V
R
= 200 V
-4.56.0A
Reverse recovery time t
rr
-6785ns
Reverse recovery charge Q
rr
- 130 250 nC
Peak reverse recovery current I
rr
I
F
= 60 A
dI/dt = 200 A/μs
V
R
= 200 V, T
J
= 125 °C
- 9.5 12.0 A
Reverse recovery time t
rr
- 128 165 ns
Reverse recovery charge Q
rr
- 601 900 nC
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
3
Document Number: 93412
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound.
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
PFC IGBT
Total gate charge Q
g
I
C
= 60 A
V
CC
= 480 V
V
GE
= 15 V
- 460 -
nCGate to source charge Q
gs
- 160 -
Gate to drain (Miller) charge Q
gd
-70-
Turn-on switching loss E
on
I
C
= 100 A, V
CC
= 360 V, V
GE
= 15 V
R
g
= 5 , L = 500 μH, T
J
= 25 °C
-0.2-
mJTurn-off switching loss E
off
-0.96-
Total switching loss E
tot
-1.16-
Turn-on delay time t
d(on)
- 240 -
ns
Rise time t
r
-47-
Turn-off delay time t
d(off)
- 240 -
Fall time t
f
-66-
Turn-on switching loss E
on
I
C
= 100 A, V
CC
= 360 V, V
GE
= 15 V
R
g
= 5 , L = 500 μH, T
J
= 125 °C
-0.33-
mJTurn-off switching loss E
off
-1.45-
Total switching loss E
tot
-1.78-
Turn-on delay time t
d(on)
- 246 -
ns
Rise time t
r
-50-
Turn-off delay time t
d(off)
- 246 -
Fall time t
f
-71-
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
f = 1 MHz
- 9500 -
pFOutput capacitance C
oes
- 780 -
Reverse transfer capacitance C
res
- 120 -
THERMISTOR ELECTRICAL CHARACTERISTICS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Resistance R T
J
= 25 °C - 30 000 -
B value B T
J
= 25 °C/T
J
= 85 °C - 4000 - K
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
AP FRED Pt Diode Junction to case diode thermal resistance
R
thJC
--4.9
°C/W
IGBT Junction to case IGBT thermal resistance - - 0.27
FRED Pt
Chopper Diode
Junction to case diode thermal resistance - - 2.25
Case to sink, flat, greased surface per module R
thCS
-0.06-°C/W
Mounting torque ± 10 % to heatsink
(1)
--4Nm
Approximate weight - 65 - g
P1-P3P4-P6P7-P9P10-P11

VS-100MT060WDF

Mfr. #:
Buy VS-100MT060WDF
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers Output & SW Modules - MTP SWITCH-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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