VS-100MT060WDF

VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
7
Document Number: 93412
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 19 - Typical Q
rr
Antiparallel Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 60 A
Fig. 20 - Typical t
rr
Chopper Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 60 A
Fig. 21 - Typical I
rr
Chopper Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 60 A
Fig. 22 - Typical Q
rr
Chopper Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 40 A
Fig. 23 - Maximum Thermal Impedance Z
thJC
Characteristics (IGBT)
Q
rr
(nC)
dI
F
/dt (A/μs)
100 200 300 400
93412_19
500
300
900
1200
1500
600
T
J
= 25 °C
T
J
= 125 °C
I
rr
(A)
dI
F
/dt (A/μs)
100 200 300 400
93412_21
500
0
20
10
15
5
T
J
= 25 °C
T
J
= 125 °C
Q
rr
(nC)
dI
F
/dt (A/μs)
100 200 300 400
93412_22
500
0
1100
400
600
900
1000
200
300
500
700
800
100
T
J
= 25 °C
T
J
= 125 °C
0.001
0.01
0.1
1
0.00001
93412_23
0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
8
Document Number: 93412
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 24 - Maximum Thermal Impedance Z
thJC
Characteristics (PFC Diode)
Fig. 25 - Gate Charge Circuit (Turn-Off)
Fig. 26 - RBSOA Circuit
Fig. 27 - S.C. SOA Circuit
Fig. 28 - Switching Loss Circuit
Fig. 29 - Resistive Load Circuit
93412_24
Z
thJC
-
Thermal Impedance
Junction to Case (°C/W)
t
1
-
Rectangular Pulse Duration (s)
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
D = 0.02
D = 0.01
DC
D = 0.05
D = 0.10
D = 0.20
D = 0.50
1K
V
CC
D.U.T.
0
L
+
-
L
80 V
R
g
1000 V
D.U.T.
+
-
Driver
D.U.T.
900 V
D
C
+
-
L
Diode clamp/
D.U.T.
D.U.T./
Driver
- 5 V
+
-
R
g
V
CC
+
-
R
g
D.U.T.
R =
V
CC
I
CM
V
CC
+
-
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
9
Document Number: 93412
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CIRCUIT CONFIGURATION
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95383
D1
E7
G6
Th
A7
E6
D2
Q1
E1
F1
D3
D4
G7
M7
Q4
B1
A1
I1
L1
M3
M2
Device code
2
3
4
5
6
51 32 4 6
1
- Vishay Semiconductors product
- Current rating (100 = 100 A)
- Essential part number (MT = MTP package)
- Voltage code x 10 = Voltage rating (example: 060 = 600 V)
- Die IGBT technology (W = Warp Speed IGBT)
- Circuit configuration (DF = Dual forward)
VS- 100 MT 060 W DF

VS-100MT060WDF

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers Output & SW Modules - MTP SWITCH-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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