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VS-100MT060WDF

P1-P3P4-P6P7-P9P10-P11
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
4
Document Number: 93412
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse BIAS SOA T
J
= 150 °C, V
GE
= 15 V
Fig. 3 - Typical IGBT Output Characteristics, T
J
= 25 °C
Fig. 4 - Typical IGBT Output Characteristics, T
J
= 125 °C
Fig. 5 - Typical IGBT Transfer Characteristics, T
J
= 125 °C
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Maximum Allowable
Case Temperature (°C)
I
C
- Continuous Collector Current (A)
80 100604020
140120
0
100
160
0
40
60
140
80
120
20
93412_01
I
C
(A)
V
CE
(V)
1 10 100 1000
0.01
0.1
1
93412_02
1000
10
100
I
C
(A)
V
CE
(V)
012345
0
93412_03
250
50
150
100
200
V
GE
= 9 V
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
I
C
(A)
V
CE
(V)
012345
0
93412_04
250
50
150
100
200
V
GE
= 9 V
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
I
C
(A)
V
GE
(V)
5678910
0
93412_05
250
50
150
100
200
T
C
= 125 °C
T
C
= 25 °C
I
CES
(mA)
V
CES
(V)
100 600200 300 400 500
0.0001
0.001
93412_06
10
1
0.1
0.01
150 °C
25 °C
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
5
Document Number: 93412
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical IGBT Gate Thresold Voltage
Fig. 8 - Typical Diode Forward Voltage Characteristics of
Antiparallel Diode, t
p
= 500 μs
Fig. 9 - Maximum Continuous Forward Current vs.
Case Temperature Antiparallel Diode
Fig. 10 - Typical PFC Diode Forward Voltage
Fig. 11 - Maximum Continuous Forward Current vs.
Case Temperature PFC Diode
Fig. 12 - Typical FRED Pt Chopper Diode Reverse Current vs.
Reverse Voltage
V
geth
(V)
I
C
(mA)
0.2 1.00.3 0.4 0.6 0.80.5 0.7 0.9
3.0
3.5
4.0
4.5
93412_07
5.0
T
J
= 125 °C
T
J
= 25 °C
I
F
- Instantaneous Forward Current (A)
V
F
- Anode to Cathode
Forward Voltage Drop (V)
0.5 1.0 1.5 2.0 2.5 3.0
0
60
100
90
40
80
20
50
30
10
70
93412_08
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
93412_09
I
F
-
Continuous
Forward Current (A)
Allowable Case Temperature (°C)
0
20
40
60
80
100
120
140
160
0 5 10 15 20
I
F
- Instantaneous Forward Drop (A)
V
F
- Forward Voltage Drop (V)
0.25 0.75 1.25 2.251.75 2.75 3.753.25
0
90
30
50
70
40
10
20
60
80
100
93412_10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
93412_11
I
F
-
Continuous
Forward Current (A)
Allowable Case Temperature (°C)
0
20
40
60
80
100
120
140
160
0 5 10 15 20 25 30 35 40
I
R
(mA)
V
R
(V)
100 200 300 400 500 600
0.00001
0.001
0.0001
0.01
0.1
93412_12
T
J
= 150 °C
T
J
= 25 °C
VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
6
Document Number: 93412
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, V
CC
= 360 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
Fig. 14 - Typical IGBT Energy Loss vs. R
g
, T
J
= 125 °C
I
C
= 100 A, V
CC
= 360 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
Fig. 15 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, V
DD
= 360 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
Fig. 16 - Typical IGBT Switching Time vs. R
g
, T
J
= 125 °C
I
C
= 100 A, V
CE
= 360 V, V
GE
= 15 V, L = 500 μH
Fig. 17 - Typical t
rr
Antiparallel Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 60 A
Fig. 18 - Typical I
rr
Antiparallel Diode vs. dI
F
/dt
V
rr
= 200 V, I
F
= 60 A
Energy (mJ)
R
g
(Ω)
0 1020304050
0
93412_14
5
3
4
2
1
E
off
E
on
Switching Time (ns)
R
g
(Ω)
010 304020 50
10
93412_16
1000
100
t
d(off)
t
d(on)
t
f
t
r
t
rr
(ns)
dI
F
/dt (A/μs)
100 200 300 400
93412_17
500
100
150
250
200
T
J
= 25 °C
T
J
= 125 °C
I
rr
(A)
dI
F
/dt (A/μs)
100 200 300 400
93412_18
500
0
25
20
10
15
5
T
J
= 25 °C
T
J
= 125 °C
P1-P3P4-P6P7-P9P10-P11

VS-100MT060WDF

Mfr. #:
Buy VS-100MT060WDF
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers Output & SW Modules - MTP SWITCH-e3
Lifecycle:
New from this manufacturer.
Delivery:
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