www.irf.com 1
4/24/08
DirectFET Power MOSFET
PD - 97133
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
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Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.272mH, R
G
= 25Ω, I
AS
= 13.4A.
Notes:
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
IRF6674TRPbF
l RoHS Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
SH SJ SP MZ MN
Description
The IRF6674PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6674PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for 48V and 36V-60V input
voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-
DC converters.
DirectFET ISOMETRIC
MZ
4 6 8 10 12 14 16
V
GS
, Gate-to-Source Voltage (V)
0
10
20
30
40
50
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
T
J
= 25°C
T
J
= 125°C
I
D
= 13.4A
V
DSS
V
GS
R
DS(on)
60V max ±20V max
9.0mΩ@ 10V
Q
g tot
Q
gd
V
gs(th)
24nC 8.3nC 4.0V
0102030
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 48V
V
DS
= 30V
I
D
= 13.4A
Absolute Maximum Ratin
s
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy mJ
I
AS
Avalanche Current A
98
Max.
10.7
67
134
±20
60
13.4
13.4
