IRF6674TRPBF Datasheet IRF6674TRPBF, IRF6674TR1PBF | P4-P6

IRF6674TRPbF

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Fig 5. Typical Output Characteristics

Fig 4. Typical Output Characteristics

Fig 6. Typical Transfer Characteristics

Fig 7. Normalized On-Resistance vs. Temperature

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

Fig 9. Typical On-Resistance vs. Drain Current

0.1 1 10

V

DS

, Drain-to-Source Voltage (V)

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤60μs PULSE WIDTH

Tj = 25°C

6.0V

VGS

TOP 15V

10V

8.0V

7.0V

BOTTOM 6.0V

0.1 1 10

V

DS

, Drain-to-Source Voltage (V)

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

≤60μs PULSE WIDTH

Tj = 150°C

6.0V

VGS

TOP 15V

10V

8.0V

7.0V

BOTTOM 6.0V

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

T

y

p

i

c

a

l

R

D

S

(

o

n

)

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 13.4A

V

GS

= 10V

1 10 100

V

DS

, Drain-to-Source Voltage (V)

10

100

1000

10000

100000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

C

oss

C

rss

C

iss

0 20 40 60 80 100

I

D

, Drain Current (A)

0

10

20

30

40

50

T

y

p

i

c

a

l

R

D

S

(

o

n

)

(

N

o

r

m

a

l

i

z

e

d

)

T

A

= 25°C

V

GS

= 7.0V

V

GS

= 8.0V

V

GS

= 10V

V

GS

= 15V

2.0 4.0 6.0 8.0 10.0 12.0

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 150°C

T

J

= 25°C

T

J

= -40°C

V

DS

= 10V

≤

60μs PULSE WIDTH

IRF6674TRPbF

www.irf.com 5

Fig 13. Typical Threshold Voltage vs.

Junction Temperature

Fig 12. Maximum Drain Current vs. Ambient Temperature

Fig 10. Typical Source-Drain Diode Forward Voltage

Fig11. Maximum Safe Operating Area

Fig 14. Maximum Avalanche Energy vs. Drain Current

25 50 75 100 125 150

T

J

, Ambient Temperature (°C)

0

2

4

6

8

10

12

14

I

D

,

D

r

a

i

n

C

u

r

e

n

t

(

A

)

-75 -50 -25 0 25 50 75 100 125 150

T

J

, Temperature ( °C )

2.0

2.5

3.0

3.5

4.0

4.5

5.0

V

G

S

(

t

h

)

G

a

t

e

t

h

r

e

s

h

o

l

d

V

o

l

t

a

g

e

(

V

)

I

D

= 250μA

I

D

= 100μA

25 50 75 100 125 150

Starting T

J

, Junction Temperature (°C)

0

100

200

300

400

E

A

S

,

S

i

n

g

l

e

P

u

l

s

e

A

v

a

l

a

n

c

h

e

E

n

e

r

g

y

(

m

J

)

I

D

TOP

4.5A

9.3A

BOTTOM

26.8A

0.1 1 10 100

V

DS

, Drain-toSource Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

C

= 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R

DS

(on)

100μsec

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V

SD

, Source-to-Drain Voltage (V)

0

1

10

100

1000

I

SD

, Reverse Drain Current (A)

V

GS

= 0V

T

J

= 150°C

T

J

= 25°C

T

J

= -40°C

IRF6674TRPbF

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Fig 15a. Gate Charge Test Circuit

Fig 15b. Gate Charge Waveform

Fig 16b. Unclamped Inductive Waveforms

t

p

V

(BR)DSS

I

AS

Fig 16a. Unclamped Inductive Test Circuit

Fig 17a. Switching Time Test Circuit

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

V

GS

Vds

Vgs

Id

Vgs(th)

Qgs1

Qgs2QgdQgodr

1K

VCC

DUT

0

L

S

20K

Fig 17b. Switching Time Waveforms

V

GS

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10V

+

-

V

DD

V

GS

IRF6674TRPBF

IRF6674TRPBF

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