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SI3585CDV-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Vishay Siliconix
Si3585CDV
Document Number: 67470
S13-1562-Rev. C, 15-Jul-13
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N- and P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Power MOSFETs
• 100 % R
g
Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch for Portable Devices
• DC/DC Converters
• Drivers: Motor, Solenoid, Relay
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 150 °C/W for n-channel and 155 °C/W for p-channel.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() Max. I
D
(A)
a
Q
g
(Typ.)
N-Channel 20
0.058 at V
GS
= 4.5 V 3.9
2.9 nC
0.078 at V
GS
= 2.5 V 3.3
P-Channel - 20
0.195 at V
GS
= - 4.5 V - 2.1
1.6 nC
0.316 at V
GS
= - 2.5 V - 1.7
Marking Code
EC XXX
Lot Traceability
and Date Code
Part # Code
TSOP-6
Top View
6
4
1
2
3
5
2.85 mm
3 mm
D
2
G
2
S
1
S
2
D
1
G
1
Ordering Information: Si3585CDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
D
1
G
1
S
1
S
2
G
2
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage
V
DS
20 - 20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
3.9
- 2.1
A
T
C
= 70 °C 3.1
- 1.7
T
A
= 25 °C
3.5
b, c
- 1.9
b, c
T
A
= 70 °C
2.8
b, c
- 1.5
b, c
Pulsed Drain Current (t = 300 µs)
I
DM
12 - 5
Source Drain Current Diode Current
T
C
= 25 °C
I
S
1.2 - 1.1
T
A
= 25 °C
0.9
b, c
- 0.9
b, c
Maximum Power Dissipation
T
C
= 25 °C
P
D
1.4 1.3
W
T
C
= 70 °C
0.9 0.8
T
A
= 25 °C
1.1
b, c
1.1
b, c
T
A
= 70 °C
0.7
b, c
0.7
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter Symbol
N-Channel P-Channel
Unit
Typ. Max. Typ. Max.
Maximum Junction-to-Ambient
b, d
t 5 s R
thJA
93 110 97 115
°C/W
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
75 90 78 95
Vishay Siliconix
Si3585CDV
www.vishay.com
2
Document Number: 67470
S13-1562-Rev. C, 15-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 µA
N-Ch 20
V
V
GS
= 0 V, I
D
= - 250 µA
P-Ch - 20
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 µA
N-Ch 15
mV/°C
I
D
= - 250 µA
P-Ch - 16.2
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
I
D
= 250 µA
N-Ch - 2.8
I
D
= - 250 µA
P-Ch 2.5
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
N-Ch 0.6 1.5
V
V
DS
= V
GS
, I
D
= - 250 µA
P-Ch - 0.6 - 1.5
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
N-Ch ± 100
nA
P-Ch ± 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
N-Ch 1
µA
V
DS
= - 20 V, V
GS
= 0 V
P-Ch - 1
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
N-Ch 10
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
P-Ch - 10
On-State Drain Current
b
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
N-Ch 12
A
V
DS
- 5 V, V
GS
= - 4.5 V
P-Ch - 5
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 4.5 V, I
D
= 2.5 A
N-Ch 0.048 0.058
V
GS
= - 4.5 V, I
D
= - 1.9 A
P-Ch 0.162 0.195
V
GS
= 2.5 V, I
D
= 1 A
N-Ch 0.065 0.078
V
GS
= - 2.5 V, I
D
= - 1 A
P-Ch 0.263 0.316
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 35 A
N-Ch 12
S
V
DS
= - 10 V, I
D
= - 1.9 A
P-Ch 1
Dynamic
a
Input Capacitance
C
iss
N-Channel
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
P-Channel
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
N-Ch 150
pF
P-Ch 210
Output Capacitance
C
oss
N-Ch 53
P-Ch 50
Reverse Transfer Capacitance
C
rss
N-Ch 22
P-Ch 35
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 10 V, I
D
= 3.5 A
N-Ch 3.2 4.8
nC
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 1.9 A
P-Ch 6 9
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 3.5 A
P-Channel
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 1.9 A
N-Ch 1.6 2.4
P-Ch 2.9 4.3
Gate-Source Charge
Q
gs
N-Ch 0.3
P-Ch 0.6
Gate-Drain Charge
Q
gd
N-Ch 0.4
P-Ch 0.9
Gate Resistance
R
g
f = 1 MHz
N-Ch 0.9 4.8 9.6
P-Ch 1.2 6.2 12.4
Vishay Siliconix
Si3585CDV
Document Number: 67470
S13-1562-Rev. C, 15-Jul-13
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Dynamic
a
Tu r n - On D e l ay T i m e
t
d(on)
N-Channel
V
DD
= 10 V, R
L
= 3.6
I
D
2.8 A, V
GEN
= 10 V, R
g
= 1
P-Channel
V
DD
= - 10 V, R
L
= 6.7
I
D
- 1.5 A, V
GEN
= - 10 V, R
g
= 1
N-Ch 5 10
ns
P-Ch 3 6
Rise Time
t
r
N-Ch 20 30
P-Ch 10 20
Turn-Off Delay Time
t
d(off)
N-Ch 11 20
P-Ch 13 20
Fall Time
t
f
N-Ch 8 16
P-Ch 7 14
Tu r n - On D e l a y T i m e
t
d(on)
N-Channel
V
DD
= 10 V, R
L
= 3.6
I
D
2.8 A, V
GEN
= 4.5 V, R
g
= 1
P-Channel
V
DD
= - 10 V, R
L
= 6.7
I
D
- 1.5 A, V
GEN
= - 4.5 V, R
g
= 1
N-Ch 15 23
P-Ch 16 25
Rise Time
t
r
N-Ch 37 56
P-Ch 16 25
Turn-Off Delay Time
t
d(off)
N-Ch 25 38
P-Ch 13 20
Fall Time
t
f
N-Ch 28 42
P-Ch 9 18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
N-Ch 1.2
A
P-Ch - 1.1
Pulse Diode Forward Current
a
I
SM
N-Ch 12
P-Ch - 5
Body Diode Voltage
V
SD
I
S
= 2.8 A, V
GS
= 0 V
N-Ch 0.8 1.2
V
I
S
= - 1.5 A, V
GS
= 0 V
P-Ch - 0.8 - 1.2
Body Diode Reverse Recovery Time
t
rr
N-Channel
I
F
= 2.8 A, dI/dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 1.5 A, dI/dt = - 100 A/µs, T
J
= 25 °C
N-Ch 8 16
ns
P-Ch 21 32
Body Diode Reverse Recovery Charge
Q
rr
N-Ch 2 4
nC
P-Ch 11 20
Reverse Recovery Fall Time
t
a
N-Ch 5
ns
P-Ch 10
Reverse Recovery Rise Time
t
b
N-Ch 3
P-Ch 11
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

SI3585CDV-T1-GE3

Mfr. #:
Buy SI3585CDV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
Lifecycle:
New from this manufacturer.
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