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SI3585CDV-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Vishay Siliconix
Si3585CDV
Document Number: 67470
S13-1562-Rev. C, 15-Jul-13
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
=150 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.05
Single Pulse
0.02
Vishay Siliconix
Si3585CDV
www.vishay.com
8
Document Number: 67470
S13-1562-Rev. C, 15-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
1
2
3
4
5
00.511.52
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 5 V thru 3 V
V
GS
= 1.5 V
V
GS
= 2 V
V
GS
= 2.5 V
0.06
0.12
0.18
0.24
0.30
012345
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 4.5 V
0
2
4
6
8
10
01.534.56
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 16 V
I
D
= 1.9 A
V
DS
= 5 V
V
DS
= 10 V
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
0.3
0.6
0.9
1.2
1.5
0 0.5 1 1.5 2
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T = 125 °C
C
T
C
= 25 °C
T
C
= - 55 °C
0
60
120
180
240
300
360
0 5 10 15 20
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.7
0.9
1.1
1.3
1.5
-50 -25 0 25 50 75 100 125 150
R
DS(on)
-On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
I
D
= 1.9 A
V
GS
= 4.5 V
V
GS
= 2.5 V
Vishay Siliconix
Si3585CDV
Document Number: 67470
S13-1562-Rev. C, 15-Jul-13
www.vishay.com
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.06
0.12
0.18
0.24
0.3
0246810
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 1.9 A
0.001
0
1
20
25
5
15
100.01
Power (W)
Time (s)
0.1
10
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
T
A
= 25 °C
Single Pulse
BVDSS Limited
10 ms
1 s, 10 s
DC
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

SI3585CDV-T1-GE3

Mfr. #:
Buy SI3585CDV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
Lifecycle:
New from this manufacturer.
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