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SI3585CDV-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Vishay Siliconix
Si3585CDV
www.vishay.com
4
Document Number: 67470
S13-1562-Rev. C, 15-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
0
3
6
9
12
00.511.52
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 5 V thru 3 V
V
GS
= 1.5 V
V
GS
= 2 V
V
GS
= 2.5 V
0.03
0.04
0.05
0.06
0.07
0.08
036912
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 4.5 V
0
2
4
6
8
10
0 0.7 1.4 2.1 2.8 3.5
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 16 V
V
DS
= 10 V
V
DS
= 5 V
I
D
= 3.5 A
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
1
2
3
4
5
0 0.5 1 1.5 2
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
42
84
126
168
210
0 5 10 15 20
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.7
0.9
1.1
1.3
-50 -25 0 25 50 75 100 125 150
R
DS(on)
-On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
I
D
= 3.5 A
V
GS
= 4.5 V
V
GS
= 2.5 V
Vishay Siliconix
Si3585CDV
Document Number: 67470
S13-1562-Rev. C, 15-Jul-13
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.02
0.035
0.05
0.065
0.08
0246810
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 3.5 A
0
1
2
3
4
5
6
0.01 0.1 1 10 100 1000
Time (s)
Power (W)
Safe Operating Area, Junction-to-Ambient
0.01
0.1
1
10
100
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
T
A
= 25 °C
Single Pulse
BVDSS Limited
10 ms
100 μs
1 s, 10 s
DC
Vishay Siliconix
Si3585CDV
www.vishay.com
6
Document Number: 67470
S13-1562-Rev. C, 15-Jul-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
1
2
3
4
5
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package Limited
Power, Junction-to-Foot
0
0.5
1
1.5
0255075100125150
Power (W)
T
C
- Case Temperature (°C)
Power, Junction-to-Ambient
0.0
0.2
0.4
0.6
0.8
1.0
0 255075100125150
Power (W)
T
A
- Ambient Temperature (°C)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

SI3585CDV-T1-GE3

Mfr. #:
Buy SI3585CDV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
Lifecycle:
New from this manufacturer.
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