VND830E-E List of figures
Doc ID 17461 Rev 2 4/26
List of figures
Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 4. Status timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5. Switching time waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 6. Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 7. Off-state output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 8. High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 9. Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 10. Status leakage current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 11. Status low output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 12. Status clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 13. On-state resistance vs T
case
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 14. On-state resistance vs V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 15. Open-load on-state detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 16. Open-load off-state detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 17. Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 18. Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 19. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 20. Overvoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 21. Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 22. Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 23. I
LIM
vs
T
case
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 24. Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 25. Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 26. Open-load detection in off-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 27. Maximum turn-off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 28. SO-16L PC board
(1)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 29. R
thj-amb
vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 30. SO-16 L thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 31. Thermal fitting model of a quad channel HSD in SO-16L . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 32. SO-16L package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Block diagram and pin description VND830E-E
5/26 Doc ID 17461 Rev 2
1 Block diagram and pin description
Figure 1. Block diagram
Figure 2. Configuration diagram (top view)
Table 2. Suggested connections for unused and not connected pins
Connection / pin Status N.C. Output Input
Floating X X X X
To ground - X -
Through 10 KΩ
resistor
OVERTEMP. 1
V
cc
GND
INPUT1
OUTPUT1
OVERVOLTAGE
LOGIC
DRIVER 1
STATUS1
V
cc
CLAMP
UNDERVOLTAGE
CLAMP 1
OPEN-LOAD ON 1
CURRENT LIMITER 1
OPEN-LOAD OFF 1
OUTPUT2
DRIVER 2
CLAMP 2
OPEN-LOAD ON 2
OPEN-LOAD OFF 2
OVERTEMP. 2
INPUT2
STATUS2
CURRENT LIMITER 2
V
CC
OUTPUT 2
OUTPUT 2
OUTPUT 2
OUTPUT 1
V
CC
OUTPUT 1
OUTPUT 1
V
CC
INPUT 2
STATUS 2
STATUS 1
INPUT 1
V
CC
GND
N.C.
1
8
9
16
VND830E-E Electrical specifications
Doc ID 17461 Rev 2 6/26
2 Electrical specifications
2.1 Absolute maximum ratings
Stressing the device above the rating listed in Ta ble 3 may cause permanent damage to the
device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality
document.
Table 3. Absolute maximum ratings
Symbol Parameter Value Unit
V
CC
DC supply voltage 41 V
- V
CC
Reverse DC supply voltage - 0.3 V
- I
GND
DC reverse ground pin current - 200 mA
I
OUT
DC output current Internally limited A
- I
OUT
Reverse DC output current - 6 A
I
IN
DC input current +/- 10 mA
I
STAT
DC status current +/- 10 mA
V
ESD
Electrostatic discharge (Human Body Model: R = 1.5 KΩ;
C = 100 pF)
- INPUT
- STATUS
- OUTPUT
- V
CC
4000
4000
5000
5000
V
V
V
V
E
MAX
Maximum switching energy
(L = 0.45 mH; R
L
= 0 Ω; V
bat
= 13.5 V; T
jstart
= 150 °C;
I
L
= 13.5 A)
57 mJ
P
tot
Power dissipation T
C
=2C 8.3 W
T
j
Junction operating temperature Internally limited °C
T
c
Case operating temperature - 40 to 150 °C
T
stg
Storage temperature - 55 to 150 °C

VND830E-E

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Power Switch ICs - Power Distribution DBLE CH HI-SIDE DRVR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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