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VND830E-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P26
Electrical specifications VND830E-E
7/26 Doc ID 17461 Rev 2
2.2 Thermal data
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
CC
< 36 V; -40 °C < T
j
< 150 °C, unless
otherwise stated.
(Per each channel)
Figure 3. Current and voltage conventions
1. V
Fn
= V
CCn
- V
OUTn
during reverse battery condition.
Table 4. Thermal data (per island)
Symbol Parameter Value Unit
R
thj-lead
Thermal resistance junction-lead 15 °C/W
R
thj-amb
Thermal resistance junction-ambient 65
(1)
1. When mounted on a standard single-sided FR-4 board with 0.5 cm
2
of Cu (at least 35 µm thick) connected to all V
CC
pins.
Horizontal mounting and no artificial air flow.
47
(2)
2. When mounted on a standard single-sided FR-4 board with 6 cm
2
of Cu (at least 35 µm thick) connected to all V
CC
pins.
Horizontal mounting and no artificial air flow.
°C/W
Table 5. Power outputs
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
Operating supply voltage 5.5 13 36 V
V
USD
Undervoltage shutdown 3 4 5.5 V
V
OV
Overvoltage shutdown 36 V
R
ON
On-state resistance
I
OUT
= 2 A; T
j
= 25°C
I
OUT
= 2 A; V
CC
> 8 V
65
130
mΩ
mΩ
I
S
I
GND
OUTPUT 2
V
CC
GND
STATUS 2
INPUT 2
I
OUT2
I
IN2
I
STAT2
V
STAT2
V
IN2
V
CC
V
OUT2
OUTPUT 1
I
OUT1
V
OUT1
INPUT 1
I
IN1
STATUS 1
I
STAT1
V
IN1
V
STAT1
V
F1
(1)
VND830E-E Electrical specifications
Doc ID 17461 Rev 2 8/26
I
S
Supply current
Off-state; V
CC
= 13 V;
V
IN
= V
OUT
= 0 V
Off-state; V
CC
= 13 V;
V
IN
= V
OUT
= 0 V; T
j
= 25°C
On-state; V
CC
= 13 V;
V
IN
= 5 V; I
OUT
= 0 A
12
12
5
40
25
7
µA
µA
mA
I
L(off1)
Off-state output current V
IN
= V
OUT
= 0 V 0 50 µA
I
L(off2)
Off-state output current V
IN
= 0 V; V
OUT
= 3.5 V -75 0 µA
I
L(off3)
Off-state output current
V
IN
= V
OUT
= 0 V; V
CC
= 13 V;
T
j
= 125°C
5µA
I
L(off4)
Off-state output current
V
IN
= V
OUT
= 0 V; V
CC
= 13 V;
T
j
=25°C
3µA
Table 6. Switching (V
CC
= 13 V)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
R
L
= 6.5 Ω from V
IN
rising
edge to V
OUT
= 1.3 V
-50-µs
t
d(off)
Turn-off delay time
R
L
= 6.5 Ω from V
IN
falling
edge to V
OUT
= 11.7 V
-50-µs
dV
OUT
/dt
(on)
Turn-on voltage slope
R
L
= 6.5 Ω from V
OUT
= 1.3 V
to V
OUT
= 10.4 V
-
See
Figure 21
-V/µs
dV
OUT
/dt
(off)
Turn-off voltage slope
R
L
= 6.5 Ω from V
OUT
= 11.7 V
to V
OUT
= 1.3 V
-
See
Figure 22
-V/µs
Table 7. Logic input
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
IL
Input low level 1.25 V
I
IL
Low level input current V
IN
= 1.25 V 1 µA
V
IH
Input high level 3.25 V
I
IH
High level input current V
IN
= 3.25 V 10 µA
V
I(hyst)
Input hysteresis voltage 0.5 V
V
ICL
Input clamp voltage
I
IN
= 1 mA
I
IN
= -1 mA
66.8
-0.7
8V
V
Table 5. Power outputs (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Electrical specifications VND830E-E
9/26 Doc ID 17461 Rev 2
Table 8. V
CC
- output diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
F
Forward on voltage -I
OUT
=1.2A; T
j
= 150 °C - - 0.6 V
Table 9. Status pin
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
STAT
Status low output voltage I
STAT
= 1.6 mA 0.5 V
I
LSTAT
Status leakage current Normal operation; V
STAT
= 5 V 10 µA
C
STAT
Status pin Input capacitance Normal operation; V
STAT
= 5 V 100 pF
V
SCL
Status clamp voltage
I
STAT
= 1 mA
I
STAT
= - 1 mA
66.8
- 0.7
8V
V
Table 10. Protections
(1)
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
TSD
Shutdown temperature 150 175 200 °C
T
R
Reset temperature 135 °C
T
hyst
Thermal hysteresis 7 15 °C
t
SDL
Status delay in overload
conditions
T
j
> T
TSD
20 µs
I
lim
Current limitation
V
CC
= 13 V
5.5 V < V
CC
< 36 V
9.5 13.5 18
18
A
A
V
demag
Turn-off output clamp
voltage
I
OUT
= 2A; L = 6mH V
CC
-41 V
CC
-48 V
CC
-55 V
Table 11. Open-load detection
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
OL
Open-load on-state detection
threshold
V
IN
= 5 V 50 115 200 mA
t
DOL(on)
Open-load on-state detection
delay
I
OUT
= 0 A 200 µs
V
OL
Open-load off-state voltage
detection threshold
V
IN
= 0 V 1.5 2.9 3.5 V
t
DOL(off)
Open-load detection delay at
turn-off
1000 µs
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P26

VND830E-E

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Manufacturer:
STMicroelectronics
Description:
Power Switch ICs - Power Distribution DBLE CH HI-SIDE DRVR
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