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PTFA080551E V1

P1-P3P4-P6P7-P9P10-P11
PTFA080551E
PTFA080551F
Data Sheet 1 of 11 Rev. 01, 2006-03-16
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTFA080551E and PTFA080551F are 55-watt, internally
matched GOLDMOS
®
FETs intended for EDGE and CDMA
applications in the 869 to 960 MHz band. Thermally-enhanced
packaging provides the coolest operation available. Full gold
metallization ensures excellent device lifetime and reliability.
PTFA080551E
Package 30265
Thermally-Enhanced High Power RF LDMOS FETs
55 W, 869 – 960 MHz
Three-Carrier CDMA2000 Performance
V
DD
= 28 V, I
DQ
= 450 mA, ƒ = 960 MHz
0
5
10
15
20
25
30
35
40
29 31 33 35 37 39 41 43
Output Power, Avg. (dBm)
Drain Efficiency (%)
-70
-65
-60
-55
-50
-45
-40
-35
Adj. Ch. Power Ratio (dBc)
ACP Low
ACP Up
ALT Up
Efficiency
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 450 mA, P
OUT
= 26 W, ƒ = 959.8 MHz
Characteristic Symbol Min Typ Max Unit
Error Vector Magnitude EVM (RMS) — 2.5 — %
Modulation Spectrum @ 400 kHz ACPR — –60 — dBc
Modulation Spectrum @ 600 kHz ACPR — –75 — dBc
Gain G
ps
— 18 — dB
Drain Efficiency η
D
— 44 — %
PTFA080551F
Package 31265
*See Infineon distributor for future availability.
Features
• Broadband internal matching
• Typical EDGE performance
- Average output power = 26 W
- Gain = 18 dB
- Efficiency = 44%
• Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 17 dB
- Efficiency = 67%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 55 W
(CW) output power
• Pb-free and RoHS compliant
PTFA080551E
PTFA080551F
Data Sheet 2 of 11 Rev. 01, 2006-03-16
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 450 mA, P
OUT
= 55 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain G
ps
18 18.5 — dB
Drain Efficiency η
D
46.5 48 — %
Intermodulation Distortion IMD — –31 –29 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V
GS
= 0 V, I
DS
= 10 µA V
(BR)DSS
65 — — V
Drain Leakage Current V
DS
= 28 V, V
GS
= 0 V I
DSS
— — 1.0 µA
V
DS
= 63 V, V
GS
= 0 V I
DSS
— — 10.0 µA
On-State Resistance V
GS
= 10 V, V
DS
= 0.1 V R
DS(on)
— 0.15 — V
Operating Gate Voltage V
DS
= 28 V, I
DQ
= 450 mA V
GS
2.0 2.3 3.0 V
Gate Leakage Current V
GS
= 10 V, V
DS
= 0 V I
GSS
— — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
DSS
65 V
Gate-Source Voltage V
GS
–0.5 to +12 V
Junction Temperature T
J
200 °C
Total Device Dissipation P
D
219 W
Above 25°C derate by 1.25 W/°C
Storage Temperature Range T
STG
–40 to +150 °C
Thermal Resistance (T
CASE
= 70°C) R
θJC
0.8 °C/W
Ordering Information
Type Package Outline Package Description Marking
PTFA080551E 30265 Thermally-enhanced slotted flange, single-ended PTFA080551E
PTFA080551F 31265 Thermally-enhanced earless flange, single-ended PTFA080551F
*See Infineon distributor for future availability.
PTFA080551E
PTFA080551F
Data Sheet 3 of 11 Rev. 01, 2006-03-16
Edge EVM and Modulation Spectrum
vs. Quiescent Current
V
DD
= 28 V, ƒ = 959.8 MHz, P
OUT
= 22 W
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
0.35 0.40 0.45 0.50 0.55 0.60
Quiescent Current (A)
EVM RMS (avg. %) .
-90
-80
-70
-60
-50
-40
-30
-20
Modulation Spectrum (dBc)
EVM
400 kHz
600 kHz
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 450 mA, ƒ = 959.8 MHz
-100
-80
-60
-40
-20
0
32 34 36 38 40 42 44 46
Output Power (dBm)
Modulation Spectrum (dBc)
5
15
25
35
45
55
Drain Efficiency (%)
Efficiency
400 kHz
600 kHz
Typical Performance (data taken in a production test fixture)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V
DD
= 28 V, I
DQ
= 450 mA, ƒ
1
= 959 MHz, ƒ
2
= 960 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
30 32 34 36 38 40 42 44 46
Output Power, Avg. (dBm)
IMD (dBc)
3rd Order
7th
5th
EDGE EVM Performance
V
DD
= 28 V, I
DQ
= 450 mA, ƒ = 959.8 MHz
0
2
4
6
8
10
32 34 36 38 40 42 44 46
Output Power (dBm)
EVM RMS (avg. %) .
5
15
25
35
45
55
Drain Efficiency (%)
EVM
Efficiency
P1-P3P4-P6P7-P9P10-P11

PTFA080551E V1

Mfr. #:
Buy PTFA080551E V1
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 50 W
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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