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PTFA080551E V1

P1-P3P4-P6P7-P9P10-P11
PTFA080551E
PTFA080551F
Data Sheet 7 of 11 Rev. 01, 2006-03-16
a 08 055 1e f_s ch_ 06 -03 -13
RF_OUT
R3
2K V
R4
2K V
R2
1.3K V
LM7805
QQ1
C1
0.001µF
VDD
C2
0.001µF
BCP56
Q1
C3
0.001µF
R1
1.2K V
R5
5.1 V
C9
33pF
l1
l6
l7
R8
10 V
DUT
C5
0.1µF
C4
10µF
35V
C6
0.1µF
C8
33pF
R7
5.1K
R6
10 V
C10
3.3pF
C11
1.0pF
l2 l3 l4
C7
0.01µF
l5
VDD
L1
L2
C12
33pF
C14
10µF
50V
C13
1µF
C16
10µF
50V
C23
33pF
C17
33µF
C18
1µF
C19
10µF
50V
C21
10µF
50V
C20
0.1µF
C15
0.1µF
C22
0.3pF
l8 l9 l10 l11RF_IN
Reference Circuit
Reference circuit schematic diagram for ƒ = 960 MHz
Circuit Assembly Information
DUT PTFA080551E or PTFA080551F LDMOS Transistor
PCB 0.76 mm [.030"] thick, ε
r
= 4.5 Rogers TMM4 2 oz. copper
Microstrip Electrical Characteristics at 960 MHz
1
Dimensions: L x W (mm) Dimensions: L x W (in.)
l1 0.070 λ, 50.0 Ω 12.19 x 1.37 0.480 x 0.054
l2 0.122 λ, 50.0 Ω 20.93 x 1.37 0.824 x 0.054
l3 0.031 λ, 50.0 Ω 5.31 x 1.37 0.209 x 0.054
l4 0.063 λ, 7.5 Ω 9.58 x 16.21 0.377 x 0.638
l5 0.162 λ, 67.0 Ω 28.45 x 0.79 1.120 x 0.031
l6, l7 0.150 λ, 55.0 Ω 25.65 x 1.17 1.010 x 0.046
l8 0.198 λ, 11.1 Ω 30.73 x 10.46 1.210 x 0.412
l9 0.145 λ, 38.0 Ω 24.21 x 2.16 0.953 x 0.085
l10 0.009 λ, 38.0 Ω 1.52 x 2.16 0.060 x 0.085
l11 0.026 λ, 50.0 Ω 4.50 x 1.37 0.177 x 0.054
1
Electrical characteristics are rounded.
PTFA080551E
PTFA080551F
Data Sheet 8 of 11 Rev. 01, 2006-03-16
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key 399-1655-2-ND
C5, C6, C15, C20 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C8, C9, C12, C17, Ceramic capacitor, 33 pF ATC 100B 330
C23
C7 Capacitor, 0.01 µF ATC 200B 103
C10 Ceramic capacitor, 3.3 pF ATC 100B 3R3
C11 Ceramic capacitor, 1.0 pF ATC 100B 1R0
C13, C18 Capacitor, 1.0 µF ATC 920C105
C14, C16, C19, C21 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C22 Ceramic capacitor, 0.3 pF ATC 100B 0R3
L1, L2 Ferrite, 8.9 mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infinion Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip Resistor 1.2 k-ohms Digi-Key P1.2KGCT-ND
R2 Chip Resistor 1.3 k-ohms Digi-Key P1.3KGCT-ND
R3 Chip Resistor 2 k-ohms Digi-Key P2KECT-ND
R4 Potentiometer 2 k-ohms Digi-Key 3224W-202ETR-ND
R5, R7 Chip Resistor 5.1 k-ohms Digi-Key P5.1KECT-ND
R6, R8 Chip Resistor 10 ohms Digi-Key P10ECT-ND
Reference circuit
assembly diagram (not to scale)*
Reference Circuit (cont.)
*Gerber Files for this circuit available on request
A080551in_01
A080551out_01
a080551ef_assy-06-03-14
C13
C18
C22 C23
C14
C12
C17
R4
Q1
QQ1
C3
C1
R1
C2
R2
R5
R3
C4
C5
C8
C7
C6
R8
R6
C9
C10
C11
R7
C19
L2
L1
C21
C16
C20
C15
PTFA080551E
PTFA080551F
Data Sheet 9 of 11 Rev. 01, 2006-03-16
Package Outline Specifications
Package 30265
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] (min)
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
20.31
[.800]
10.16±0.25
[.400±.010]
2X 2.59±0.38
[.107 ±.015]
FLANGE 9.78
[.385]
2x 7.11
[.280]
7.11
[.280]
15.23
[.600]
4x 1.52
[.060]
C
L
C
L
(45° X 2.03
[.080])
S
D
G
2X R1.60
[.063]
LID 10.16±0.25
[.400±.010]
0.0381 [.0015] -A-
3.48±0.38
[.137±.015]
1.02
[.040]
SPH 1.57
[.062]
15.60±0.51
[.614±.020]
H-30265-2-1-2303
P1-P3P4-P6P7-P9P10-P11

PTFA080551E V1

Mfr. #:
Buy PTFA080551E V1
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors RFP-LDMOS GOLDMOS 8 50 W
Lifecycle:
New from this manufacturer.
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