OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NB3H83905CDTR2G

P1-P3P4-P6P7-P9P10-P12P13-P14
NB3H83905C
http://onsemi.com
4
Table 5. MAXIMUM RATINGS (Note 2)
Symbol
Parameter Condition 1 Condition 1 Rating Unit
V
DDx
Positive Power Supply GND = 0 V 4.6 V
V
I
Input Voltage –0.5 v V
I
v V
DD
+ 0.5 V
T
A
Operating Temperature Range, Industrial −40 to v +85 °C
T
stg
Storage Temperature Range −65 to +150 °C
q
JA
Thermal Resistance (Junction−to−Ambient) 0 lfpm
500 lfpm
SOIC−16
SOIC−16
80
55
°C/W
q
JC
Thermal Resistance (Junction−to−Case) (Note 3) SOIC−16 33−36 °C/W
q
JA
Thermal Resistance (Junction−to−Ambient) 0 lfpm
500 lfpm
TSSOP−16
TSSOP−16
138
108
°C/W
q
JC
Thermal Resistance (Junction−to−Case) (Note 3) TSSOP−16 33−36 °C/W
q
JA
Thermal Resistance (Junction−to−Ambient) 0 lfpm
500 lfpm
QFN−20
QFN−20
47
33
°C/W
q
JC
Thermal Resistance (Junction−to−Case) (Note 3) QFN−20 18 °C/W
T
sol
Wave Solder 3 sec @ 248°C 265 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and not valid simultaneously. If
stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected.
3. JEDEC standard multilayer board − 2S2P (2 signal, 2 power).
NB3H83905C
http://onsemi.com
5
Table 6. DC CHARACTERISTICS
Symbol
Characteristic Min Typ Max Unit
V
DD
= V
DDO
= 3.135 V to 3.465 V (3.3 V $5%); GND = 0 V, T
A
= −405C to +855C
IDD
Core Quiescent Power Supply Current (ENABLEx = LOW) 10 mA
IDDO Output Quiescent Power Supply Current (ENABLEx = LOW) 5 mA
V
IH
Input HIGH Voltage ENABLEx, XTAL_IN/CLK 2 V
DD
+
0.3 V
V
V
IL
Input LOW Voltage ENABLEx, XTAL_IN/CLK −0.3 0.8 V
V
OH
Output HIGH Voltage (Note 4) 2.6 V
V
OL
Output LOW Voltage (Note 4) 0.5 V
C
IN
Input Capacitance 4 pF
C
PD
Power Dissipation Capacitance (per Output) (Note 4) 19 pF
R
OUT
Output Impedance (Note 4) 7
W
V
DD
= V
DDO
= 2.375 V to 2.625 V (2.5 V $5%); GND = 0 V, T
A
= −405C to +855C
IDD
Core Quiescent Power Supply Current (ENABLEx = LOW) 8 mA
IDDO Output Quiescent Power Supply Current (ENABLEx = LOW) 4 mA
V
IH
Input HIGH Voltage ENABLEx, XTAL_IN/CLK 1.7 V
DD
+
0.3 V
V
V
IL
Input LOW Voltage ENABLEx, XTAL_IN/CLK −0.3 0.7 V
V
OH
Output HIGH Voltage (I
OH
= −1 mA)
Output HIGH Voltage (Note 4)
2.0
1.8
V
V
OL
Output LOW Voltage (I
OL
= 1 mA)
Output LOW Voltage (Note 4)
0.4
0.45
V
C
IN
Input Capacitance 4 pF
C
PD
Power Dissipation Capacitance (per Output) (Note 4) 18 pF
R
OUT
Output Impedance (Note 4) 7
W
V
DD
= V
DDO
= 1.6 V to 2.0 V (1.8 V $0.2 V); GND = 0 V, T
A
= −405C to +855C
IDD
Core Quiescent Power Supply Current (ENABLEx = LOW) 5 mA
IDDO Output Quiescent Power Supply Current (ENABLEx = LOW) 3 mA
V
IH
Input HIGH Voltage ENABLEx, XTAL_IN/CLK 0.65*V
DD
V
DD
+
0.3 V
V
V
IL
Input LOW Voltage ENABLEx, XTAL_IN/CLK −0.3 0.35*V
DD
V
V
OH
Output HIGH Voltage (Note 4) V
DDO
−0.3 V
V
OL
Output LOW Voltage (Note 4) 0.35 V
C
IN
Input Capacitance 4 pF
C
PD
Power Dissipation Capacitance (per Output) (Note 4) 16 pF
R
OUT
Output Impedance (Note 4) 10
W
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification
limit values are applied individually under normal operating conditions and not valid simultaneously.
4. Parallel terminated 50 W to V
DDO
/2 (see Figure 5).
NB3H83905C
http://onsemi.com
6
Table 6. DC CHARACTERISTICS (continued)
Symbol UnitMaxTypMinCharacteristic
V
DD
= 3.135 V to 3.465 V (3.3 V $5%); V
DDO
= 2.375 V to 2.625 V (2.5 V $5%); GND = 0 V, T
A
= −405C to +855C
IDD
Core Quiescent Power Supply Current (ENABLEx = LOW) 10 mA
IDDO Output Quiescent Power Supply Current (ENABLEx = LOW) 4 mA
V
IH
Input HIGH Voltage ENABLEx, XTAL_IN/CLK 2 V
DD
+
0.3 V
V
V
IL
Input LOW Voltage ENABLEx, XTAL_IN/CLK −0.3 0.8 V
V
OH
Output HIGH Voltage (I
OH
= −1 mA)
Output HIGH Voltage (Note 4)
2.0
1.8
V
V
OL
Output LOW Voltage (I
OL
= 1 mA)
Output LOW Voltage (Note 4)
0.4
0.45
V
C
IN
Input Capacitance 4 pF
C
PD
Power Dissipation Capacitance (per Output) (Note 4) 18 pF
R
OUT
Output Impedance (Note 4) 7
W
V
DD
= 3.135 V to 3.465 V (3.3 V $5%); V
DDO
= 1.6 V to 2.0 V (1.8 V $0.2 V.); GND = 0 V, T
A
= −405C to +855C
IDD
Core Quiescent Power Supply Current (ENABLEx = LOW) 10 mA
IDDO Output Quiescent Power Supply Current (ENABLEx = LOW) 3 mA
V
IH
Input HIGH Voltage ENABLEx, XTAL_IN/CLK 2 V
DD
+
0.3 V
V
V
IL
Input LOW Voltage ENABLEx, XTAL_IN/CLK −0.3 0.8 V
V
OH
Output HIGH Voltage (Note 4) V
DDO
−0.3 V
V
OL
Output LOW Voltage (Note 4) 0.35 V
C
IN
Input Capacitance 4 pF
C
PD
Power Dissipation Capacitance (per Output) (Note 4) 16 pF
R
OUT
Output Impedance (Note 4) 10
W
V
DD
= 2.375 V to 2.625 V (2.5 V $5%); V
DDO
= 1.6 V to 2.0 V (1.8 V $0.2 V); GND = 0 V, T
A
= −405C to +855C
IDD
Core Quiescent Power Supply Current (ENABLEx = LOW) 8 mA
IDDO Output Quiescent Power Supply Current (ENABLEx = LOW) 3 mA
V
IH
Input HIGH Voltage ENABLEx, XTAL_IN/CLK 1.7 V
DD
+
0.3 V
V
V
IL
Input LOW Voltage ENABLEx, XTAL_IN/CLK −0.3 0.7 V
V
OH
Output HIGH Voltage (Note 4) V
DDO
−0.3 V
V
OL
Output LOW Voltage (Note 4) 0.35 V
C
IN
Input Capacitance 4 pF
C
PD
Power Dissipation Capacitance (per Output) (Note 4) 16 pF
R
OUT
Output Impedance (Note 4) 10
W
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification
limit values are applied individually under normal operating conditions and not valid simultaneously.
4. Parallel terminated 50 W to V
DDO
/2 (see Figure 5).
P1-P3P4-P6P7-P9P10-P12P13-P14

NB3H83905CDTR2G

Mfr. #:
Buy NB3H83905CDTR2G
Manufacturer:
ON Semiconductor
Description:
Clock Buffer 1.8V/2.5V/3.3 V BUFFER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet