Philips Semiconductors Product data
GTL2000
22-bit bi-directional low voltage translator
2003 Apr 01
6
Sizing pull-up resistor
The pull-up resistor value needs to limit the current through the pass transistor when it is in the “on” state to about 15 mA. This will guarantee a
pass voltage of 260 to 350 mV. If the current through the pass transistor is higher than 15 mA, the pass voltage will also be higher in the “on”
state. To set the current through each pass transistor at 15 mA, the pull-up resistor value is calculated as follows:
Resistor value (W) +
Pull-up voltage (V)*0.35 V
0.015 A
The table below summarizes resistor values for various reference voltages and currents at 15 mA and also at 10 mA and 3 mA. The resistor
value shown in the +10% column or a larger value should be used to ensure that the pass voltage of the transistor would be 350 mV or less.
The external driver must be able to sink the total current from the resistors on both sides of the GTL-TVC device at 0.175 V, although the 15 mA
only applies to current flowing through the GTL-TVC device. See Application Note AN10145-01 Bi-Directional Voltage Translators for more
information.
PULL UP RESISTOR VALUES
PULL UP RESISTOR VALUE (OHMS)
15 mA 10 mA 3 mA
VOLTAGE
NOMINAL + 10 % NOMINAL + 10 % NOMINAL + 10 %
5.0 V 310 341 465 512 1550 1705
3.3 V 197 217 295 325 983 1082
2.5 V 143 158 215 237 717 788
1.8 V 97 106 145 160 483 532
1.5 V 77 85 115 127 383 422
1.2 V 57 63 85 94 283 312
NOTES:
1. Calculated for V
OL
= 0.35 V
2. Assumes output driver V
OL
= 0.175 V at stated current
3. +10% to compensate for V
DD
range and resistor tolerance.
ABSOLUTE MAXIMUM RATINGS
1,
2,
3
SYMBOL PARAMETER CONDITIONS RATING UNIT
V
SREF
DC source reference voltage -0.5 to +7.0 V
V
DREF
DC drain reference voltage -0.5 to +7.0 V
V
GREF
DC gate reference voltage -0.5 to +7.0 V
V
Sn
DC voltage Port S
n
-0.5 to +7.0 V
V
Dn
DC voltage Port D
n
-0.5 to +7.0 V
I
REFK
DC diode current on reference pins V
I
< 0 -50 mA
I
SK
DC diode current Port S
n
V
I
< 0 -50 mA
I
DK
DC diode current Port D
n
V
I
< 0 -50 mA
I
MAX
DC clamp current per channel Channel in ON-state ±128 mA
T
stg
Storage temperature range -65 to +150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 °C.
3. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed.