Philips Semiconductors Product data
GTL2000
22-bit bi-directional low voltage translator
2003 Apr 01
7
RECOMMENDED OPERATING CONDITIONS
LIMITS
SYMBOL PARAMETER CONDITIONS
Min Max
UNIT
V
I/O
Input/output voltage (Sn, Dn) 0 5.5 V
V
SREF
DC source reference voltage
1
0 5.5 V
V
DREF
DC drain reference voltage 0 5.5 V
V
GREF
DC gate reference voltage 0 5.5 V
I
PASS
Pass transistor current — 64 mA
T
amb
Operating ambient temperature range In free air -40 +85 °C
NOTE:
1. V
SREF
≤ V
DREF
- 1.5 V for best results in level shifting applications.
ELECTRICAL CHARACTERISTICS OVER RECOMMENDED OPERATING FREE-AIR TEMPERATURE RANGE
(unless otherwise noted)
LIMITS
SYMBOL PARAMETER TEST CONDITIONS
MIN TYP
1
MAX
UNIT
V
OL
Low level output voltage
V
DD
= 3.0 V; V
SREF
= 1.365 V; V
Sn
or V
Dn
= 0.175 V;
I
clamp
= 15.2 mA
— 260 350 mV
V
IK
Input clamp voltage I
I
= -18 mA V
GREF
= 0 — — -1.2 V
I
IH
Gate input leakage V
I
= 5 V V
GREF
= 0 — — 5 µA
C
I(GREF)
Gate capacitance V
I
= 3 V or 0 — 97.4 — pF
C
IO(OFF)
Off capacitance V
O
= 3 V or 0 V
GREF
= 0 — 7.4 — pF
C
IO(ON)
On capacitance V
O
= 3 V or 0 V
GREF
= 3 V — 18.6 — pF
V
GREF
= 4.5 V — 3.5 5
V
GREF
= 3 V — 4.4 7
V
I
= 0
V
GREF
= 2.3 V
I
O
= 64 mA
— 5.5 9
Ω
I
V
GREF
= 1.5 V — 67 105
r
on
2
On-resistance
V
GREF
= 1.5 V I
O
= 30 mA — 9 15 Ω
V
GREF
= 4.5 V — 7 10
V
I
= 2.4 V
V
GREF
= 3 V
I
O
= 15 mA
— 58 80
Ω
V
I
= 1.7 V V
GREF
= 2.3 V
O
— 50 70
NOTES:
1. All typical values are measured at T
amb
= 25 °C
2. Measured by the voltage drop between the Sn and the Dn terminals at the indicated current through the switch.
On-state resistance is determined by the lowest voltage of the two (Sn or Dn) terminals.
