2002-2012 Microchip Technology Inc. DS21416D-page 1
TC429
Features
High Peak Output Current: 6A
Wide Input Supply Voltage Operating Range:
- 7V to 18V
High-Impedance CMOS Logic Input
Logic Input Threshold Independent of Supply
Voltage
Low Supply Current:
- With Logic ‘1’ Input – 5 mA max.
- With Logic ‘0’ Input – 0.5 mA max.
Output Voltage Swing Within 25 mV of Ground
or V
DD
Short Delay Time: 75 nsec max
Available in the Space-Saving 8-Pin SOIC
Package.
High Capacitive Load Drive Capability:
-t
RISE
, t
FALL
= 35 nsec max with
C
LOAD
= 2500 pF
Applications
Switch-Mode Power Supplies
CCD Drivers
Pulse Transformer Drive
Class D Switching Amplifiers
Package Types
General Description
The TC429 is a high-speed, single output, CMOS-level
translator and driver. Designed specifically to drive
highly capacitive power MOSFET gates, the TC429
features a 2.5 output impedance and 6A peak output
current drive.
A 2500 pF capacitive load will be driven to 18V in
25 nsec. The rapid switching times with large
capacitive loads minimize MOSFET switching power
losses.
A TTL/CMOS input logic level is translated into an
output voltage swing that equals the supply voltage and
will swing to within 25 mV of ground or V
DD
. Input volt-
age swing may equal the supply voltage. Logic input
current is under 10 µA, making direct interface to
CMOS/bipolar switch-mode power supply controllers
easy. Input “speed-up” capacitors are not required.
The CMOS design minimizes quiescent power supply
current. With a logic ‘1’ input, power supply current is
5 mA maximum and decreases to 0.5 mA for logic0
inputs.
For dual output MOSFET drivers, see the TC426/
TC427/TC428 (DS21415), TC4426/TC4427/TC4428
(DS21422) and TC4426A/TC4427A/TC4428A
(DS21423) data sheets.
For non-inverting applications, or applications requiring
latch-up protection, see the TC4420/TC4429
(DS21419) data sheet.
CERDIP/PDIP/SOIC
1
2
3
4
V
DD
5
6
7
8
OUTPUT
GND
V
DD
INPUT
NC
GND
OUTPUT
TC429
NC = No Internal Connection
Note: Duplicate pins must both be connected for
proper operation.
6A Single High-Speed, CMOS Power MOSFET Driver
TC429
DS21416D-page 2 2002-2012 Microchip Technology Inc.
Functional Block Diagram
Effective
Input C = 38 pF
TC429
Output
Input
GND
V
DD
300 mV
1,8
6,7
2
4,5
2002-2012 Microchip Technology Inc. DS21416D-page 3
TC429
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage .....................................................+20V
Input Voltage, Any Terminal
...................................V
DD
+ 0.3V to GND – 0.3V
Power Dissipation (T
A
70°C)
PDIP............................................................730 mW
CERDIP.......................................................800 mW
SOIC............................................................470 mW
Storage Temperature Range..............-65°C to +150°C
Maximum Junction Temperature, T
J
............... +150°C
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
PIN FUNCTION TABLE
DC ELECTRICAL CHARACTERISTICS
Symbol Description
V
DD
Supply input, 7V to 18V
INPUT Control input. TTL/CMOS compatible
logic input
NC No connection
GND Ground
GND Ground
OUTPUT
CMOS push-pull, common to pin 7
OUTPUT CMOS push-pull, common to pin 6
V
DD
Supply input, 7V to 18V
Electrical Specifications: Unless otherwise noted, T
A
= +25°C with 7V V
DD
18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage V
IH
2.4 1.8 V
Logic ‘0’, Low Input Voltage V
IL
—1.30.8V
Input Current I
IN
-10 10 µA 0VV
IN
V
DD
Output
High Output Voltage V
OH
V
DD
– 0.025 V
Low Output Voltage V
OL
——0.025V
Output Resistance R
O
—1.82.5 V
IN
= 0.8V,
V
OUT
= 10 mA, V
DD
= 18V
—1.52.5 V
IN
= 2.4V,
V
OUT
= 10 mA, V
DD
= 18V
Peak Output Current I
PK
—6.0AV
DD
= 18V, Figure 4-4
Latch-Up Protection
Withstand Reverse Current
I
REV
0.5 A Duty cycle2%, t 300 µsec,
V
DD
= 16V
Switching Time (Note 1)
Rise Time t
R
—2335nsecC
L
= 2500 pF, Figure 4-1
Fall Time t
F
—2535nsecC
L
= 2500 pF, Figure 4-1
Delay Time t
D1
—5375nsecFigure 4-1
Delay Time t
D2
—6075nsecFigure 4-1
Power Supply
Power Supply Current I
S
—3.55.0mAV
IN
= 3V
—0.30.5 V
IN
= 0V
Note 1: Switching times ensured by design.

TC429CPA

Mfr. #:
Manufacturer:
Microchip Technology
Description:
Gate Drivers 6A Power
Lifecycle:
New from this manufacturer.
Delivery:
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