TC429
DS21416D-page 4 2002-2012 Microchip Technology Inc.
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, over operating temperature range with 7V V
DD
18V.
Parameters Sym Min Typ Max Units Conditions
Input
Logic ‘1’, High Input Voltage V
IH
2.4 V
Logic ‘0’, Low Input Voltage V
IL
——0.8V
Input Current I
IN
-10 10 µA 0VV
IN
V
DD
Output
High Output Voltage V
OH
V
DD
– 0.025 V
Low Output Voltage V
OL
——0.025V
Output Resistance R
O
——5.0 V
IN
= 0.8V,
V
OUT
= 10 mA, V
DD
= 18V
——5.0 V
IN
= 2.4V,
V
OUT
= 10 mA, V
DD
= 18V
Switching Time (Note 1)
Rise Time t
R
70 nsec C
L
= 2500 pF, Figure 4-1
Fall Time t
F
70 nsec C
L
= 2500 pF, Figure 4-1
Delay Time t
D1
100 nsec Figure 4-1
Delay Time t
D2
120 nsec Figure 4-1
Power Supply
Power Supply Current I
S
——12mAV
IN
= 3V
——1.0 V
IN
= 0V
Note 1: Switching times ensured by design.
Electrical Specifications: Unless otherwise noted, T
A
= +25°C with 7V V
DD
18V.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range (C) T
A
0—+70ºC
Specified Temperature Range (E) T
A
-40 +85 ºC
Specified Temperature Range (M) T
A
-55 +125 ºC
Maximum Junction Temperature T
J
+150 ºC
Storage Temperature Range T
A
-65 +150 ºC
Package Thermal Resistances
Thermal Resistance, 8L-CERDIP
JA
—150—ºC/W
Thermal Resistance, 8L-PDIP
JA
—125—ºC/W
Thermal Resistance, 8L-SOIC
JA
—155—ºC/W
2002-2012 Microchip Technology Inc. DS21416D-page 5
TC429
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25°C with 7V V
DD
18V.
FIGURE 2-1: Rise/Fall Times vs. Supply
Voltage.
FIGURE 2-2: Rise/Fall Times vs.
Temperature.
FIGURE 2-3: Rise/Fall Times vs.
Capacitive Load.
FIGURE 2-4: Supply Current vs.
Capacitive Load.
FIGURE 2-5: Delay Times vs.
Temperature.
FIGURE 2-6: Delay Times vs. Supply
Voltage.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
60
50
40
30
20
10
5101520
SUPPLY VOLTAGE (V)
TIME (nsec)
T
A
= +25
°
C
C
L
= 2500 pF
t
R
t
F
60
50
40
30
20
10
075
TEMPERATURE (
°
C)
TIME (nsec)
C
L
= 2500 pF
V
DD
= +15V
-50 -25 25 50 100 125 150
t
R
t
F
100
10
1
100 1K 10K
CAPACITIVE LOAD (pF)
TIME (nsec)
t
R
t
F
T
A
= +25
°
C
V
DD
= +15V
70
60
50
40
30
20
10
0
SUPPLY CURRENT (mA)
10 100 1K 10K
CAPACITIVE LOAD (pF)
200 kHz
20 kHz
T
A
= +25
°
C
V
DD
= +15V
400 kHz
90
80
70
60
50
40
075
TEMPERATURE (
°
C)
DELAY TIME (nsec)
-50 -25 25 50 100 125
t
D2
t
D1
C
L
= 2500 pF
V
DD
= +15V
150
140
120
100
80
60
40
5
DELAY TIME (nsec)
10 15 20
SUPPLY VOLTAGE (V)
t
D1
t
D2
T
A
= +25
°
C
C
L
= 2500 pF
TC429
DS21416D-page 6 2002-2012 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C with 7V V
DD
18V.
FIGURE 2-7: Supply Current vs.
Frequency.
FIGURE 2-8: Supply Current vs. Supply
Voltage.
FIGURE 2-9: Supply Current vs.
Temperature.
.
FIGURE 2-10: Voltage Transfer
Characterstics.
FIGURE 2-11: High Output Voltage
(V
DD
-V
OH
) vs. Output Source Current.
FIGURE 2-12: Low Output Voltage vs.
Output Sink Current.
50
40
30
20
10
0
1 10 100 1
K
15V
10V
V
DD
= 18V
5V
T
A
= +25
°
C
C
L
= 2500 pF
SUPPLY CURRENT (mA)
FREQUENCY (kHz)
4
3
2
-75 -25 50 100
150
SUPPLY CURRENT (mA)
TEMPERATURE (°C)
-50 0 25 75 125
V
DD
= +18
°
C
R
L
=
INPUT LOGIC "1"
HYSTERESIS
310 mV
200 mV
300 mV
20
15
10
5
0
1.25
0.25 0.50 0.75 1 1.50 1.75 2
T
A
= +25
°
C
OUTPUT VOLTAGE (V)
INPUT VOLTAGE (V)
OUTPUT VOLTAGE (mV)
400
300
200
100
SOURCE CURRENT (mA)
0 20 40 60 80 100
V
DD
= 5V
10V
15V
18V
T
A
= +25°C
OUTPUT VOLTAGE (mV)
400
300
200
100
SINK CURRENT (mA)
0 20 40 60 80 100
V
DD
= 5V
10V
15V
18V
T
A
= +25°C

TC429CPA

Mfr. #:
Manufacturer:
Microchip Technology
Description:
Gate Drivers 6A Power
Lifecycle:
New from this manufacturer.
Delivery:
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