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MRF7S38075HSR3

P1-P3P4-P6P7-P9P10-P12
MRF7S38075HR3 MRF7S38075HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical WiMAX Performance: V
DD
= 30 Volts, I
DQ
= 900 mA, P
out
=
12 Watts Avg., f = 3400 and 3600 MHz, 802.16d, 64 QAM
3
/
4
, 4 bursts, 7
MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 14 dB
Drain Efficiency — 14%
Device Output Signal PAR — 8.7 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — -49 dBc in 0.5 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 75 Watts CW
Peak Tuned Output Power
• P
out
@ 1 dB Compression Point w 75 Watts CW
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DS
-0.5, +65 Vdc
Gate- Source Voltage V
GS
-6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
- 65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature
(1,2)
T
J
225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 86°C, 74 W CW
Case Temperature 69°C, 12 W CW
R
θ
JC
0.46
0.49
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF7S38075H
Rev. 0, 8/2007
Freescale Semiconductor
Technical Data
MRF7S38075HR3
MRF7S38075HSR3
3400 - 3600 MHz, 12 W AVG., 30 V
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI- 780
MRF7S38075HR3
CASE 465A-06, STYLE 1
NI- 780S
MRF7S38075HSR3
Freescale Semiconductor, Inc., 2007. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF7S38075HR3 MRF7S38075HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22- A114) 1C (Minimum)
Machine Model (per EIA/JESD22- A115) A (Minimum)
Charge Device Model (per JESD22- C101) IV (Minimum)
Table 4. Electrical Characteristics (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 1 µAdc
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 1 µAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 248 µAdc)
V
GS(th)
1.2 2 2.7 Vdc
Gate Quiescent Voltage
(V
DD
= 30 Vdc, I
D
= 900 mAdc, Measured in Functional Test)
V
GS(Q)
2 2.7 3.5 Vdc
Drain- Source On- Voltage
(V
GS
= 10 Vdc, I
D
= 2.3 Adc)
V
DS(on)
0.1 0.21 0.3 Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
— 0.77 — pF
Output Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
— 464 — pF
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C
iss
— 214 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 900 mA, P
out
= 12 W Avg., f = 3400 MHz and f =
3600 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM
3
/
4
, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset.
Power Gain G
ps
12 14 17 dB
Drain Efficiency η
D
12 14 24 %
Output Peak -to -Average Ratio @ 0.01% Probability on CCDF PAR 7.5 8.7 — dB
Adjacent Channel Power Ratio ACPR — -49 -46 dBc
Input Return Loss IRL — -12 -5 dB
1. Part internally matched both on input and output.
(continued)
MRF7S38075HR3 MRF7S38075HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (T
C
= 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 900 mA, P
out
= 12 W Avg.,
f = 3400 MHz and f = 3600 MHz, WiMAX Signal, OFDM Single-Carrier, 7 MHz Channel Bandwidth, 64 QAM
3
/
4
, 4 Bursts, PAR = 9.5 dB @
0.01% Probability on CCDF.
Mask System Type G @ P
out
= 32 W Avg.
Point B at 3.5 MHz Offset
Point C at 5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
Point F at 17.5 MHz Offset
Mask
—
—
—
—
—
-27
-38
-42
-60
-60
—
—
—
—
—
dBc
Relative Constellation Error @ P
out
= 12 W Avg.
(1)
RCE — -34 — dB
Error Vector Magnitude
(1)
(Typical EVM Performance @ P
out
= 12 W Avg. with OFDM 802.16d
Signal Call)
EVM — 2.1 — % rms
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 900 mA, 3400- 3600 MHz Bandwidth
Video Bandwidth @ 84 W PEP P
out
where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
— 20 —
MHz
Gain Flatness in 200 MHz Bandwidth @ P
out
= 12 W Avg. G
F
— 0.36 — dB
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ P
out
= 75 W CW
Φ — 3.21 — °
Average Group Delay @ P
out
= 75 W CW, f = 3500 MHz Delay — 2.38 — ns
Part-to -Part Insertion Phase Variation @ P
out
= 75 W CW,
f = 3500 MHz, Six Sigma Window
∆Φ — 63.4 — °
Gain Variation over Temperature
(-30°C to +85°C)
∆G — 0.025 — dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
∆P1dB — 0.026 — dBm/°C
1. RCE = 20Log(EVM/100)
P1-P3P4-P6P7-P9P10-P12

MRF7S38075HSR3

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RF MOSFET Transistors 3600MHZ 12W 30V NI780HS
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