MRF7S38075HR3 MRF7S38075HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
IMD, INTERMODULATION DISTORTION (dBc)
−70
−10
1
−40
−50
10
−30
−20
−60
5th Order
3rd Order
200
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWO−TONE SPACING (MHz)
10
−60
IM3−U
−20
−30
−50
1 100
IMD, INTERMODULATION DISTORTION (dBc)
−40
IM3−L
IM5−U
IM5−L
IM7−L
IM7−U
−25
−50
−55
−60
−45
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
0
P
out
, OUTPUT POWER (WATTS) AVG. WiMAX
35
30
10
100
20
ACPR
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
ACPR (dBc)
η
D
25
15
G
ps
V
DD
= 30 Vdc, I
DQ
=900 mA
f1 = 3495 MHz, f2 = 3505 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
V
DD
= 30 Vdc, P
out
= 84 W (PEP), I
DQ
= 900 mA
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 3500 MHz
100
8
17
0
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 30 Vdc
I
DQ
= 900 mA
f = 3500 MHz
T
C
= −30_C
−30_ C
101
16
15
14
13
12
35
30
25
20
15
η
D
, DRAIN EFFICIENCY (%)
G
ps
η
D
G
ps
, POWER GAIN (dB)
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
40
9
14
0
10
11
I
DQ
= 900 mA
f = 3500 MHz
120
V
DD
= 28 V
30 V
0
1
−40
−35
−30
40
25_C
85_C
12
13
32 V
5
V
DD
= 30 Vdc, I
DQ
= 900 mA
f = 3500 MHz, 802.16d, 64 QAM
3
/
4
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
45
−10
11
10
9
200
10
5
25_C
85_C
80
100
7th Order
10
